A superinductor in a deep sub-micron integrated circuit

Fuente: arXiv
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Main Authors: Swift, T. H., Olivieri, F., Aizpurua-Iraola, G., Kirkman, J., Noah, G. M., de Kruijf, M., von Horstig, F. E., Gomez-Saiz, A., Morton, J. J. L., Gonzalez-Zalba, M. F.
Format: Preprint
Published: 2025
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author Swift, T. H.
Olivieri, F.
Aizpurua-Iraola, G.
Kirkman, J.
Noah, G. M.
de Kruijf, M.
von Horstig, F. E.
Gomez-Saiz, A.
Morton, J. J. L.
Gonzalez-Zalba, M. F.
author_facet Swift, T. H.
Olivieri, F.
Aizpurua-Iraola, G.
Kirkman, J.
Noah, G. M.
de Kruijf, M.
von Horstig, F. E.
Gomez-Saiz, A.
Morton, J. J. L.
Gonzalez-Zalba, M. F.
contents Superinductors are circuit elements characterised by an intrinsic impedance in excess of the superconducting resistance quantum ($R_\text{Q}\approx6.45~$k$Ω$), with applications from metrology and sensing to quantum computing. However, they are typically obtained using exotic materials with high density inductance such as Josephson junctions, superconducting nanowires or twisted two-dimensional materials. Here, we present a superinductor realised within a silicon integrated circuit (IC), exploiting the high kinetic inductance ($\sim 1$~nH/$\square$) of TiN thin films native to the manufacturing process (22-nm FDSOI). By interfacing the superinductor to a silicon quantum dot formed within the same IC, we demonstrate a radio-frequency single-electron transistor (rfSET), the most widely used sensor in semiconductor-based quantum computers. The integrated nature of the rfSET reduces its parasitics which, together with the high impedance, yields a sensitivity improvement of more than two orders of magnitude over the state-of-the-art, combined with a 10,000-fold area reduction. Beyond providing the basis for dense arrays of integrated and high-performance qubit sensors, the realization of high-kinetic-inductance superconducting devices integrated within modern silicon ICs opens many opportunities, including kinetic-inductance detector arrays for astronomy and the study of metamaterials and quantum simulators based on 1D and 2D resonator arrays.
format Preprint
id arxiv_https___arxiv_org_abs_2507_13202
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle A superinductor in a deep sub-micron integrated circuit
Swift, T. H.
Olivieri, F.
Aizpurua-Iraola, G.
Kirkman, J.
Noah, G. M.
de Kruijf, M.
von Horstig, F. E.
Gomez-Saiz, A.
Morton, J. J. L.
Gonzalez-Zalba, M. F.
Quantum Physics
Mesoscale and Nanoscale Physics
Superconductivity
Superinductors are circuit elements characterised by an intrinsic impedance in excess of the superconducting resistance quantum ($R_\text{Q}\approx6.45~$k$Ω$), with applications from metrology and sensing to quantum computing. However, they are typically obtained using exotic materials with high density inductance such as Josephson junctions, superconducting nanowires or twisted two-dimensional materials. Here, we present a superinductor realised within a silicon integrated circuit (IC), exploiting the high kinetic inductance ($\sim 1$~nH/$\square$) of TiN thin films native to the manufacturing process (22-nm FDSOI). By interfacing the superinductor to a silicon quantum dot formed within the same IC, we demonstrate a radio-frequency single-electron transistor (rfSET), the most widely used sensor in semiconductor-based quantum computers. The integrated nature of the rfSET reduces its parasitics which, together with the high impedance, yields a sensitivity improvement of more than two orders of magnitude over the state-of-the-art, combined with a 10,000-fold area reduction. Beyond providing the basis for dense arrays of integrated and high-performance qubit sensors, the realization of high-kinetic-inductance superconducting devices integrated within modern silicon ICs opens many opportunities, including kinetic-inductance detector arrays for astronomy and the study of metamaterials and quantum simulators based on 1D and 2D resonator arrays.
title A superinductor in a deep sub-micron integrated circuit
topic Quantum Physics
Mesoscale and Nanoscale Physics
Superconductivity
url https://arxiv.org/abs/2507.13202