4T2R X-ReRAM CiM Array for Variation-tolerant, Low-power, Massively Parallel MAC Operation

Fuente: arXiv
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Bibliographic Details
Main Authors: Kihara, Fuyuki, Uenohara, Seiji, Awamura, Satoshi, Misawa, Naoko, Matsui, Chihiro, Takeuchi, Ken
Format: Preprint
Published: 2025
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author Kihara, Fuyuki
Uenohara, Seiji
Awamura, Satoshi
Misawa, Naoko
Matsui, Chihiro
Takeuchi, Ken
author_facet Kihara, Fuyuki
Uenohara, Seiji
Awamura, Satoshi
Misawa, Naoko
Matsui, Chihiro
Takeuchi, Ken
contents Computation-in-Memory (CiM) is attracting attention as a technology that can perform MAC calculations required for AI accelerators, at high speed with low power consumption. However, there is a problem regarding power consumption and device-derived errors that increase as row parallelism increases. In this paper, a 4T2R ReRAM cell and an 8T SRAM CiM suitable for CiM is proposed. It is shown that adopting the proposed 4T2R ReRAM cell reduces the errors due to variation in ReRAM devices compared to conventional 4T4R ReRAM cells.
format Preprint
id arxiv_https___arxiv_org_abs_2507_13631
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle 4T2R X-ReRAM CiM Array for Variation-tolerant, Low-power, Massively Parallel MAC Operation
Kihara, Fuyuki
Uenohara, Seiji
Awamura, Satoshi
Misawa, Naoko
Matsui, Chihiro
Takeuchi, Ken
Hardware Architecture
Computation-in-Memory (CiM) is attracting attention as a technology that can perform MAC calculations required for AI accelerators, at high speed with low power consumption. However, there is a problem regarding power consumption and device-derived errors that increase as row parallelism increases. In this paper, a 4T2R ReRAM cell and an 8T SRAM CiM suitable for CiM is proposed. It is shown that adopting the proposed 4T2R ReRAM cell reduces the errors due to variation in ReRAM devices compared to conventional 4T4R ReRAM cells.
title 4T2R X-ReRAM CiM Array for Variation-tolerant, Low-power, Massively Parallel MAC Operation
topic Hardware Architecture
url https://arxiv.org/abs/2507.13631