Alignment behavior of 2D diopsides (d-silicates) under the influence of an AC electric field

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Auteurs principaux: Mishra, Himakshi, Slathia, Surbhi, Ipaves, Bruno, de Oliveira, Raphael Benjamim, Junior, Marcelo Lopes Pereira, Tromer, Raphael Matozo, Costin, Gelu, Glavin, Nicholas R., Roy, Ajit K., Galvao, Douglas Soares, Tiwary, Chandra Shekar
Format: Preprint
Publié: 2025
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author Mishra, Himakshi
Slathia, Surbhi
Ipaves, Bruno
de Oliveira, Raphael Benjamim
Junior, Marcelo Lopes Pereira
Tromer, Raphael Matozo
Costin, Gelu
Glavin, Nicholas R.
Roy, Ajit K.
Galvao, Douglas Soares
Tiwary, Chandra Shekar
author_facet Mishra, Himakshi
Slathia, Surbhi
Ipaves, Bruno
de Oliveira, Raphael Benjamim
Junior, Marcelo Lopes Pereira
Tromer, Raphael Matozo
Costin, Gelu
Glavin, Nicholas R.
Roy, Ajit K.
Galvao, Douglas Soares
Tiwary, Chandra Shekar
contents Controlling the alignment of two dimensional (2D) materials is crucial for optimizing their electronic and mechanical properties in next generation devices. This study explores how electric fields can manipulate the orientation of 2D diopside (CaMgSi2O6) flakes, a flexible silicate material, through a phenomenon called flexoelectricity, where applied voltage generates mechanical strain. We exfoliated diopside crystals into ultrathin flakes, placed them on microelectrodes, and used AC electric fields to induce alignment via acoustic strain. Raman spectroscopy showed that the flakes reoriented/realigned under the field, with vibrational peaks weakening most at high frequencies (10 MHz). Electrical tests revealed this alignment improves conductivity by 20-30%, as straightened flakes create better pathways for current flow. Fully atomistic molecular dynamics simulations further explained how these flakes naturally align on surfaces within picoseconds, matching our experimental observations. Together, these findings demonstrate a practical way to tune diopside properties using electric fields, opening doors for its use in flexible electronics, sensors, and energy devices.
format Preprint
id arxiv_https___arxiv_org_abs_2507_13962
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Alignment behavior of 2D diopsides (d-silicates) under the influence of an AC electric field
Mishra, Himakshi
Slathia, Surbhi
Ipaves, Bruno
de Oliveira, Raphael Benjamim
Junior, Marcelo Lopes Pereira
Tromer, Raphael Matozo
Costin, Gelu
Glavin, Nicholas R.
Roy, Ajit K.
Galvao, Douglas Soares
Tiwary, Chandra Shekar
Mesoscale and Nanoscale Physics
Materials Science
Controlling the alignment of two dimensional (2D) materials is crucial for optimizing their electronic and mechanical properties in next generation devices. This study explores how electric fields can manipulate the orientation of 2D diopside (CaMgSi2O6) flakes, a flexible silicate material, through a phenomenon called flexoelectricity, where applied voltage generates mechanical strain. We exfoliated diopside crystals into ultrathin flakes, placed them on microelectrodes, and used AC electric fields to induce alignment via acoustic strain. Raman spectroscopy showed that the flakes reoriented/realigned under the field, with vibrational peaks weakening most at high frequencies (10 MHz). Electrical tests revealed this alignment improves conductivity by 20-30%, as straightened flakes create better pathways for current flow. Fully atomistic molecular dynamics simulations further explained how these flakes naturally align on surfaces within picoseconds, matching our experimental observations. Together, these findings demonstrate a practical way to tune diopside properties using electric fields, opening doors for its use in flexible electronics, sensors, and energy devices.
title Alignment behavior of 2D diopsides (d-silicates) under the influence of an AC electric field
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2507.13962