Sub-kelvin measurement of silicon thermal expansion with a Fabry-Pérot cavity stabilized laser
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866918097304158208 |
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| author | Roset, Pierre Hariri, Yara Meyer, Rémi Millo, Jacques Lacroûte, Clément Margueron, Samuel Kersalé, Yann Gillot, Jonathan |
| author_facet | Roset, Pierre Hariri, Yara Meyer, Rémi Millo, Jacques Lacroûte, Clément Margueron, Samuel Kersalé, Yann Gillot, Jonathan |
| contents | In this letter, we report the measurement of the coefficient of thermal expansion (CTE) of single-crystal silicon from 655 mK to 16 K using an ultra-stable laser based on a single-crystal silicon Fabry-Perot cavity. Below 1 K temperatures, the CTE is in the $10^{-13}$ K$^{-1}$ range with a lowest point at $\boldsymbol{α(}655$ mK$ \boldsymbol{)=} 3.5 \pm 0.4 \times 10^{-13}$ K$^{-1}$. We produce a theoretical model based on Debye and Einstein models to effectively approximate the CTE measured in this temperature range. This is the lowest-temperature CTE measurement of silicon to date, as well as the lowest operating temperature for an ultra-stable Fabry-Perot cavity for laser frequency stabilization. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_13976 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Sub-kelvin measurement of silicon thermal expansion with a Fabry-Pérot cavity stabilized laser Roset, Pierre Hariri, Yara Meyer, Rémi Millo, Jacques Lacroûte, Clément Margueron, Samuel Kersalé, Yann Gillot, Jonathan Optics In this letter, we report the measurement of the coefficient of thermal expansion (CTE) of single-crystal silicon from 655 mK to 16 K using an ultra-stable laser based on a single-crystal silicon Fabry-Perot cavity. Below 1 K temperatures, the CTE is in the $10^{-13}$ K$^{-1}$ range with a lowest point at $\boldsymbol{α(}655$ mK$ \boldsymbol{)=} 3.5 \pm 0.4 \times 10^{-13}$ K$^{-1}$. We produce a theoretical model based on Debye and Einstein models to effectively approximate the CTE measured in this temperature range. This is the lowest-temperature CTE measurement of silicon to date, as well as the lowest operating temperature for an ultra-stable Fabry-Perot cavity for laser frequency stabilization. |
| title | Sub-kelvin measurement of silicon thermal expansion with a Fabry-Pérot cavity stabilized laser |
| topic | Optics |
| url | https://arxiv.org/abs/2507.13976 |