Metal-Insulator transition and Charge Transport Mechanisms in SnSe$_2$ Field-Effect Transistor
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arXiv
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| Autores principales: | , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866912492706332672 |
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| author | Lakhara, Aarti Thole, Lars Haug, Rolf J. Bhobe, P. A. |
| author_facet | Lakhara, Aarti Thole, Lars Haug, Rolf J. Bhobe, P. A. |
| contents | We report an observation of metal-insulator transition in a thin film of SnSe$_2$. The room-temperature carrier concentration of SnSe$_2$ film was increased by electrostatic doping to 1.14$\times$ 10$^{13}$ cm$^{-2}$. A crossover from insulating phase to metallic state was clearly observed. The low-temperature charge transport mechanism is governed by two-dimensional (2D) variable-range hopping. This mechanism is influenced by band bending and gap states introduced by selenium vacancies. At low temperatures, the mobility is primarily limited by charged impurities, while at higher temperatures, it follows a power-law dependence, $μ= T^{-γ}$, indicating a dominance of electron-phonon scattering. The application of a gate field shifts the Fermi level toward the conduction band, and at sufficiently high temperatures, this drives the system into a metallic state. Our findings offer insights into the charge transport mechanisms in SnSe$_2$ FET, this understanding will allow for the optimization of other 2D materials for advanced electronic device applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_14536 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Metal-Insulator transition and Charge Transport Mechanisms in SnSe$_2$ Field-Effect Transistor Lakhara, Aarti Thole, Lars Haug, Rolf J. Bhobe, P. A. Materials Science We report an observation of metal-insulator transition in a thin film of SnSe$_2$. The room-temperature carrier concentration of SnSe$_2$ film was increased by electrostatic doping to 1.14$\times$ 10$^{13}$ cm$^{-2}$. A crossover from insulating phase to metallic state was clearly observed. The low-temperature charge transport mechanism is governed by two-dimensional (2D) variable-range hopping. This mechanism is influenced by band bending and gap states introduced by selenium vacancies. At low temperatures, the mobility is primarily limited by charged impurities, while at higher temperatures, it follows a power-law dependence, $μ= T^{-γ}$, indicating a dominance of electron-phonon scattering. The application of a gate field shifts the Fermi level toward the conduction band, and at sufficiently high temperatures, this drives the system into a metallic state. Our findings offer insights into the charge transport mechanisms in SnSe$_2$ FET, this understanding will allow for the optimization of other 2D materials for advanced electronic device applications. |
| title | Metal-Insulator transition and Charge Transport Mechanisms in SnSe$_2$ Field-Effect Transistor |
| topic | Materials Science |
| url | https://arxiv.org/abs/2507.14536 |