Model of dark current in silicon-based barrier impurity band infrared detector devices
Fuente:
arXiv
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| Format: | Preprint |
| Veröffentlicht: |
2025
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| _version_ | 1866908720283254784 |
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| author | Cui, Mengyang |
| author_facet | Cui, Mengyang |
| contents | Dark current in silicon-based blocked impurity band (BIB) infrared detectors has long been a critical limitation on device performance. This work proposes a chiral-phonon-assisted spin current model at interfaces to explain the parabolic-like dark current behavior observed at low bias voltages. Concurrently, the spatially-confined charge transport theory is employed to elucidate the dark current generation mechanism across the entire operational voltage range. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_14923 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Model of dark current in silicon-based barrier impurity band infrared detector devices Cui, Mengyang Applied Physics Strongly Correlated Electrons Dark current in silicon-based blocked impurity band (BIB) infrared detectors has long been a critical limitation on device performance. This work proposes a chiral-phonon-assisted spin current model at interfaces to explain the parabolic-like dark current behavior observed at low bias voltages. Concurrently, the spatially-confined charge transport theory is employed to elucidate the dark current generation mechanism across the entire operational voltage range. |
| title | Model of dark current in silicon-based barrier impurity band infrared detector devices |
| topic | Applied Physics Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2507.14923 |