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| Auteurs principaux: | , , , , , , |
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| Format: | Preprint |
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2025
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| Accès en ligne: | https://arxiv.org/abs/2507.15430 |
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| _version_ | 1866908458735894528 |
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| author | Singh, Nikhil Ubaid, Mohammad Nayak, Pabitra Kumar He, Jiangang Ghosh, Dibyajyoti Wolverton, Chris Pal, Koushik |
| author_facet | Singh, Nikhil Ubaid, Mohammad Nayak, Pabitra Kumar He, Jiangang Ghosh, Dibyajyoti Wolverton, Chris Pal, Koushik |
| contents | Photovoltaic materials facilitate the conversion of sunlight into electricity by harnessing the interaction between light and matter, offering an eco-friendly and cost-efficient energy solution. Combining data-driven approaches with static and time-dependent density functional theories and nonadiabatic molecular dynamics simulations, we predict 14 high-performance photoabsorber materials from a family of known quaternary semiconductors. Among these, we investigate four compounds - SrCuGdSe3, SrCuDyTe3, BaCuLaSe3, and BaCuLaTe3 in greater detail. Hybrid density functional theory calculations including spin-orbit coupling reveal that SrCuGdSe3, SrCuDyTe3, BaCuLaSe3 and BaCuLaTe3 possess direct band gaps of 1.65, 1.79, 1.05, and 1.01 eV, respectively. These band gap values lie close to an optimal range ideal for visible-light absorption. Consequently, the calculated optical absorption coefficient and spectroscopic limited maximum efficiency for these compounds become comparable or larger than crystalline silicon, GaAs, and methylammonium lead iodide. Calculated exciton binding energies for these compounds are relatively small (30-32 meV), signifying easy separation of the electron-hole pairs, and hence enhanced power conversion efficiencies. Investigations of photoexcited carrier dynamics reveal a relatively long carrier lifetime (~ 30-40 ns), suggesting suppressed nonradiative recombination and enhanced photo-conversion efficiencies. We further determined the defect formation energies in these compounds, which showed that despite the likely formation of cation vacancies and interstitial defects, midgap states remain absent making these defects non-detrimental to carrier recombination. Our theoretical predictions invite experimental verification and encourage further investigations of these and similar compounds in this quaternary semiconductor family. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_15430 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Data-driven Discovery of Novel High-performance Quaternary Chalcogenide Photovoltaics Singh, Nikhil Ubaid, Mohammad Nayak, Pabitra Kumar He, Jiangang Ghosh, Dibyajyoti Wolverton, Chris Pal, Koushik Materials Science Photovoltaic materials facilitate the conversion of sunlight into electricity by harnessing the interaction between light and matter, offering an eco-friendly and cost-efficient energy solution. Combining data-driven approaches with static and time-dependent density functional theories and nonadiabatic molecular dynamics simulations, we predict 14 high-performance photoabsorber materials from a family of known quaternary semiconductors. Among these, we investigate four compounds - SrCuGdSe3, SrCuDyTe3, BaCuLaSe3, and BaCuLaTe3 in greater detail. Hybrid density functional theory calculations including spin-orbit coupling reveal that SrCuGdSe3, SrCuDyTe3, BaCuLaSe3 and BaCuLaTe3 possess direct band gaps of 1.65, 1.79, 1.05, and 1.01 eV, respectively. These band gap values lie close to an optimal range ideal for visible-light absorption. Consequently, the calculated optical absorption coefficient and spectroscopic limited maximum efficiency for these compounds become comparable or larger than crystalline silicon, GaAs, and methylammonium lead iodide. Calculated exciton binding energies for these compounds are relatively small (30-32 meV), signifying easy separation of the electron-hole pairs, and hence enhanced power conversion efficiencies. Investigations of photoexcited carrier dynamics reveal a relatively long carrier lifetime (~ 30-40 ns), suggesting suppressed nonradiative recombination and enhanced photo-conversion efficiencies. We further determined the defect formation energies in these compounds, which showed that despite the likely formation of cation vacancies and interstitial defects, midgap states remain absent making these defects non-detrimental to carrier recombination. Our theoretical predictions invite experimental verification and encourage further investigations of these and similar compounds in this quaternary semiconductor family. |
| title | Data-driven Discovery of Novel High-performance Quaternary Chalcogenide Photovoltaics |
| topic | Materials Science |
| url | https://arxiv.org/abs/2507.15430 |