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| Main Authors: | , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2507.15860 |
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| _version_ | 1866908745699688448 |
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| author | Lu, Albert Arghavani, Reza Wong, Hiu Yung |
| author_facet | Lu, Albert Arghavani, Reza Wong, Hiu Yung |
| contents | In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design a static random-access memory (SRAM) using gate-all-around field-effect-transistor (GAA-FET) technology so that it is immune to single alpha particle radiation error. In other words, with the design, there will be no single-event upset (SEU) due to alpha particles. We first use ab initio calculations in PHITS to show that there is a maximum linear energy transfer (LET), LETmax, for the alpha particle in Si and Si$_x$Ge$_{1-x}$. Based on that, by designing a sub-7nm GAA-FET-based SRAM with bottom dielectric isolation (BDI), we show that the SRAM does not flip even if the particle strike is in the worst-case scenario. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_15860 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design Lu, Albert Arghavani, Reza Wong, Hiu Yung Emerging Technologies Computational Physics In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design a static random-access memory (SRAM) using gate-all-around field-effect-transistor (GAA-FET) technology so that it is immune to single alpha particle radiation error. In other words, with the design, there will be no single-event upset (SEU) due to alpha particles. We first use ab initio calculations in PHITS to show that there is a maximum linear energy transfer (LET), LETmax, for the alpha particle in Si and Si$_x$Ge$_{1-x}$. Based on that, by designing a sub-7nm GAA-FET-based SRAM with bottom dielectric isolation (BDI), we show that the SRAM does not flip even if the particle strike is in the worst-case scenario. |
| title | Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design |
| topic | Emerging Technologies Computational Physics |
| url | https://arxiv.org/abs/2507.15860 |