Machine Learning-Assisted Nano-imaging and Spectroscopy of Phase Coexistence in a Wide-Bandgap Semiconductor

Fuente: arXiv
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Main Authors: Bragg, Alyssa, Liu, Fengdeng, Yang, Zhifei, Hirshberg, Nitzan, Garber, Madison, Lukaskawcez, Brayden, Thompson, Liam, MacDonald, Shane, Binger, Hayden, Uram, Devon, Bucsek, Ashley, Jalan, Bharat, McLeod, Alexander
Format: Preprint
Published: 2025
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author Bragg, Alyssa
Liu, Fengdeng
Yang, Zhifei
Hirshberg, Nitzan
Garber, Madison
Lukaskawcez, Brayden
Thompson, Liam
MacDonald, Shane
Binger, Hayden
Uram, Devon
Bucsek, Ashley
Jalan, Bharat
McLeod, Alexander
author_facet Bragg, Alyssa
Liu, Fengdeng
Yang, Zhifei
Hirshberg, Nitzan
Garber, Madison
Lukaskawcez, Brayden
Thompson, Liam
MacDonald, Shane
Binger, Hayden
Uram, Devon
Bucsek, Ashley
Jalan, Bharat
McLeod, Alexander
contents Wide bandgap semiconductors with high room temperature mobilities are promising materials for high-power electronics. Stannate films provide wide bandgaps and optical transparency, although electron-phonon scattering can limit mobilities. In SrSnO3, epitaxial strain engineering stabilizes a high-mobility tetragonal phase at room temperature, resulting in a threefold increase in electron mobility among doped films. However, strain relaxation in thicker films leads to nanotextured coexistence of tetragonal and orthorhombic phases with unclear implications for optoelectronic performance. The observed nanoscale phase coexistence demands nano-spectroscopy to supply spatial resolution beyond conventional, diffraction-limited microscopy. With nano-infrared spectroscopy, we provide a comprehensive analysis of phase coexistence in SrSnO3 over a broad energy range, distinguishing inhomogeneous phonon and plasma responses arising from structural and electronic domains. We establish Nanoscale Imaging and Spectroscopy with Machine-learning Assistance (NISMA) to map nanotextured phases and quantify their distinct optical responses through a robust quantitative analysis, which can be applied to a broad array of complex oxide materials.
format Preprint
id arxiv_https___arxiv_org_abs_2507_17677
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Machine Learning-Assisted Nano-imaging and Spectroscopy of Phase Coexistence in a Wide-Bandgap Semiconductor
Bragg, Alyssa
Liu, Fengdeng
Yang, Zhifei
Hirshberg, Nitzan
Garber, Madison
Lukaskawcez, Brayden
Thompson, Liam
MacDonald, Shane
Binger, Hayden
Uram, Devon
Bucsek, Ashley
Jalan, Bharat
McLeod, Alexander
Materials Science
Mesoscale and Nanoscale Physics
Wide bandgap semiconductors with high room temperature mobilities are promising materials for high-power electronics. Stannate films provide wide bandgaps and optical transparency, although electron-phonon scattering can limit mobilities. In SrSnO3, epitaxial strain engineering stabilizes a high-mobility tetragonal phase at room temperature, resulting in a threefold increase in electron mobility among doped films. However, strain relaxation in thicker films leads to nanotextured coexistence of tetragonal and orthorhombic phases with unclear implications for optoelectronic performance. The observed nanoscale phase coexistence demands nano-spectroscopy to supply spatial resolution beyond conventional, diffraction-limited microscopy. With nano-infrared spectroscopy, we provide a comprehensive analysis of phase coexistence in SrSnO3 over a broad energy range, distinguishing inhomogeneous phonon and plasma responses arising from structural and electronic domains. We establish Nanoscale Imaging and Spectroscopy with Machine-learning Assistance (NISMA) to map nanotextured phases and quantify their distinct optical responses through a robust quantitative analysis, which can be applied to a broad array of complex oxide materials.
title Machine Learning-Assisted Nano-imaging and Spectroscopy of Phase Coexistence in a Wide-Bandgap Semiconductor
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2507.17677