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| Autores principales: | , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2507.18388 |
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| _version_ | 1866915693133299712 |
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| author | De la Barrera, Gaspar Nunez, Alvaro S. |
| author_facet | De la Barrera, Gaspar Nunez, Alvaro S. |
| contents | Spin-memristors are a class of materials that can store memories through the control of spins, potentially leading to novel technologies that address the constraints of standard silicon electronics, thereby facilitating the advancement of more intelligent and energy-efficient computing systems. In this work, we present a spin-memristor based on antiferromagnetic materials that exhibit Hall-memresistance. Moreover, the nonlinear Edelstein effect acts as both a writer and eraser of memory registers. We provide a generic symmetry-based analysis that supports the viability of the effect. To achieve a concrete realization of these ideas, we focus on CuMnAs, which has been shown to have a controllable nonlinear Hall effect. Our results extend the two-terminal spin-memristor setting, which is customarily the standard type of device in this context, to a four-terminal device. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_18388 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Antiferromagnetic Hall-Memristors De la Barrera, Gaspar Nunez, Alvaro S. Materials Science Mesoscale and Nanoscale Physics Spin-memristors are a class of materials that can store memories through the control of spins, potentially leading to novel technologies that address the constraints of standard silicon electronics, thereby facilitating the advancement of more intelligent and energy-efficient computing systems. In this work, we present a spin-memristor based on antiferromagnetic materials that exhibit Hall-memresistance. Moreover, the nonlinear Edelstein effect acts as both a writer and eraser of memory registers. We provide a generic symmetry-based analysis that supports the viability of the effect. To achieve a concrete realization of these ideas, we focus on CuMnAs, which has been shown to have a controllable nonlinear Hall effect. Our results extend the two-terminal spin-memristor setting, which is customarily the standard type of device in this context, to a four-terminal device. |
| title | Antiferromagnetic Hall-Memristors |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2507.18388 |