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Antibonding and Electronic Instabilities in GdRu2X2 (X = Si, Ge, Sn): A New Pathway Toward Developing Centrosymmetric Skyrmion Materials

Fuente: arXiv

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Bibliographic Details
Main Authors:	Rathnaweera, Dasuni N., Huai, Xudong, Kumar, K. Ramesh, Tewari, Sumanta, Winiarski, Michał J., Dronskowski, Richard, Tran, Thao T.
Format:	Preprint
Published:	2025
Subjects:	Strongly Correlated Electrons Materials Science
Online Access:	Acceder al recurso
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