Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator
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arXiv
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| Autori principali: | , , , , , , , |
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| Natura: | Preprint |
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2025
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| author | Lemieux-Leduc, Cédric Atalla, Mahmoud R. M. Assali, Simone Rotaru, Nicolas Brodeur, Julien Kéna-Cohen, Stéphane Moutanabbir, Oussama Peter, Yves-Alain |
| author_facet | Lemieux-Leduc, Cédric Atalla, Mahmoud R. M. Assali, Simone Rotaru, Nicolas Brodeur, Julien Kéna-Cohen, Stéphane Moutanabbir, Oussama Peter, Yves-Alain |
| contents | Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this perspective, germanium-tin (GeSn) alloy has been extensively investigated as a silicon-compatible semiconductor with bandgap tunability that covers this entire spectral range. Indeed, a variety of GeSn-based high-performance optoelectronic devices have been demonstrated, confirming the potential of this system for mid-infrared applications. However, the integration of these devices onto silicon photonic platforms remains underexplored. Herein, we demonstrate the fabrication and integration, through transfer-printing, of strain-relaxed GeSn membranes onto silicon-on-insulator waveguides to create integrated detectors operating up to 3.1 $μ$m at room temperature. Two different designs of waveguide structures are evaluated to study the coupling efficiency between the passive structures and the active membrane detector. A responsivity reaching 0.36 A/W at an operation wavelength of 2.33 $μ$m is measured under a bias of 1 V. Moreover, the fabrication resulted in multiple working devices exhibiting similar performance using a single transfer printing step, demonstrating the scalability of the proposed approach. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_19269 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator Lemieux-Leduc, Cédric Atalla, Mahmoud R. M. Assali, Simone Rotaru, Nicolas Brodeur, Julien Kéna-Cohen, Stéphane Moutanabbir, Oussama Peter, Yves-Alain Applied Physics Optics Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this perspective, germanium-tin (GeSn) alloy has been extensively investigated as a silicon-compatible semiconductor with bandgap tunability that covers this entire spectral range. Indeed, a variety of GeSn-based high-performance optoelectronic devices have been demonstrated, confirming the potential of this system for mid-infrared applications. However, the integration of these devices onto silicon photonic platforms remains underexplored. Herein, we demonstrate the fabrication and integration, through transfer-printing, of strain-relaxed GeSn membranes onto silicon-on-insulator waveguides to create integrated detectors operating up to 3.1 $μ$m at room temperature. Two different designs of waveguide structures are evaluated to study the coupling efficiency between the passive structures and the active membrane detector. A responsivity reaching 0.36 A/W at an operation wavelength of 2.33 $μ$m is measured under a bias of 1 V. Moreover, the fabrication resulted in multiple working devices exhibiting similar performance using a single transfer printing step, demonstrating the scalability of the proposed approach. |
| title | Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator |
| topic | Applied Physics Optics |
| url | https://arxiv.org/abs/2507.19269 |