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Hauptverfasser: Irschik, Philipp, Lamprecht, David, Chokappa, Shrirang, Mangler, Clemens, Speckmann, Carsten, Bui, Thuy An, Längle, Manuel, Filipovic, Lado, Kotakoski, Jani
Format: Preprint
Veröffentlicht: 2025
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Online-Zugang:https://arxiv.org/abs/2507.19371
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author Irschik, Philipp
Lamprecht, David
Chokappa, Shrirang
Mangler, Clemens
Speckmann, Carsten
Bui, Thuy An
Längle, Manuel
Filipovic, Lado
Kotakoski, Jani
author_facet Irschik, Philipp
Lamprecht, David
Chokappa, Shrirang
Mangler, Clemens
Speckmann, Carsten
Bui, Thuy An
Längle, Manuel
Filipovic, Lado
Kotakoski, Jani
contents Surface contamination not only influences but in some cases even dominates the measured properties of two-dimensional materials. Although different cleaning methods are often used for contamination removal, commonly used spectroscopic cleanliness assessment methods can leave the level of achieved cleanliness ambiguous. Despite two decades of research on 2D materials, the true cleanliness of the used samples is often left open to interpretation. In this work, freestanding monolayer graphene and hexagonal boron nitride are annealed at different temperatures in a custom-built ultra-high vacuum heating chamber, connected to a scanning transmission electron microscope via a vacuum transfer line, enabling atomically resolved cleanliness characterization as a function of annealing temperature, while eliminating the introduction of airborne contamination during sample transport. While annealing at 200 °C already reduces contamination significantly, it is not until 400 °C or higher, where over 90% of the free-standing monolayer areas are atomically clean. At this point, further contamination removal is mainly limited by defects in the material and metal contamination introduced during the sample transfer or growth. The achieved large, atomically clean areas can then be used for further nanoscale engineering steps or device processing, facilitating interaction with the material rather than contamination.
format Preprint
id arxiv_https___arxiv_org_abs_2507_19371
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Atomically clean free-standing two-dimensional materials through heating in ultra-high vacuum
Irschik, Philipp
Lamprecht, David
Chokappa, Shrirang
Mangler, Clemens
Speckmann, Carsten
Bui, Thuy An
Längle, Manuel
Filipovic, Lado
Kotakoski, Jani
Materials Science
Applied Physics
Surface contamination not only influences but in some cases even dominates the measured properties of two-dimensional materials. Although different cleaning methods are often used for contamination removal, commonly used spectroscopic cleanliness assessment methods can leave the level of achieved cleanliness ambiguous. Despite two decades of research on 2D materials, the true cleanliness of the used samples is often left open to interpretation. In this work, freestanding monolayer graphene and hexagonal boron nitride are annealed at different temperatures in a custom-built ultra-high vacuum heating chamber, connected to a scanning transmission electron microscope via a vacuum transfer line, enabling atomically resolved cleanliness characterization as a function of annealing temperature, while eliminating the introduction of airborne contamination during sample transport. While annealing at 200 °C already reduces contamination significantly, it is not until 400 °C or higher, where over 90% of the free-standing monolayer areas are atomically clean. At this point, further contamination removal is mainly limited by defects in the material and metal contamination introduced during the sample transfer or growth. The achieved large, atomically clean areas can then be used for further nanoscale engineering steps or device processing, facilitating interaction with the material rather than contamination.
title Atomically clean free-standing two-dimensional materials through heating in ultra-high vacuum
topic Materials Science
Applied Physics
url https://arxiv.org/abs/2507.19371