Saved in:
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2507.20543 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866917025802092544 |
|---|---|
| author | Li, Xinyan Ashen, Kenna Shi, Chuqiao Mao, Nannan Kolachina, Saagar Yang, Kaiwen Zhang, Tianyi Husain, Sajid Ramesh, Ramamoorthy Kong, Jing Qian, Xiaofeng Han, Yimo |
| author_facet | Li, Xinyan Ashen, Kenna Shi, Chuqiao Mao, Nannan Kolachina, Saagar Yang, Kaiwen Zhang, Tianyi Husain, Sajid Ramesh, Ramamoorthy Kong, Jing Qian, Xiaofeng Han, Yimo |
| contents | Two-dimensional van der Waals (vdW) materials hold the potential for ultra-scaled ferroelectric (FE) devices due to their silicon compatibility and robust polarization down to atomic scale. However, the inherently weak vdW interactions enable facile sliding between layers, introducing complexities beyond those encountered in conventional ferroelectric materials and presenting significant challenges in uncovering intricate switching pathways. Here, we combine atomic-resolution imaging under in-situ electrical biasing conditions with first-principles calculations to unravel the atomic-scale switching mechanisms in SnSe, a vdW group-IV monochalcogenide. Our results uncover the coexistence of a consecutive 90 degrees switching pathway and a direct 180 degrees switching pathway from antiferroelectric (AFE) to FE order in this vdW system. Atomic-scale investigations and strain analysis reveal that the switching processes simultaneously induce interlayer sliding and compressive strain, while the lattice remains coherent despite the presence of multidomain structures. These findings elucidate vdW ferroelectric switching dynamics at atomic scale and lay the foundation for the rational design of 2D ferroelectric nanodevices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_20543 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Revealing Atomic-Scale Switching Pathways in van der Waals Ferroelectrics Li, Xinyan Ashen, Kenna Shi, Chuqiao Mao, Nannan Kolachina, Saagar Yang, Kaiwen Zhang, Tianyi Husain, Sajid Ramesh, Ramamoorthy Kong, Jing Qian, Xiaofeng Han, Yimo Materials Science Two-dimensional van der Waals (vdW) materials hold the potential for ultra-scaled ferroelectric (FE) devices due to their silicon compatibility and robust polarization down to atomic scale. However, the inherently weak vdW interactions enable facile sliding between layers, introducing complexities beyond those encountered in conventional ferroelectric materials and presenting significant challenges in uncovering intricate switching pathways. Here, we combine atomic-resolution imaging under in-situ electrical biasing conditions with first-principles calculations to unravel the atomic-scale switching mechanisms in SnSe, a vdW group-IV monochalcogenide. Our results uncover the coexistence of a consecutive 90 degrees switching pathway and a direct 180 degrees switching pathway from antiferroelectric (AFE) to FE order in this vdW system. Atomic-scale investigations and strain analysis reveal that the switching processes simultaneously induce interlayer sliding and compressive strain, while the lattice remains coherent despite the presence of multidomain structures. These findings elucidate vdW ferroelectric switching dynamics at atomic scale and lay the foundation for the rational design of 2D ferroelectric nanodevices. |
| title | Revealing Atomic-Scale Switching Pathways in van der Waals Ferroelectrics |
| topic | Materials Science |
| url | https://arxiv.org/abs/2507.20543 |