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Main Authors: Wang, Yupeng, An, Jiaqi, Ye, Chunhui, Wang, Xiangqi, Mai, Di, Zhao, Hongze, Zhang, Yang, Peng, Chiyu, Watanabe, Kenji, Taniguchi, Takashi, Sun, Xiaoyu, Dai, Rucheng, Wang, Zhongping, Qin, Wei, Qiao, Zhenhua, Zhang, Zengming
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2507.20637
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author Wang, Yupeng
An, Jiaqi
Ye, Chunhui
Wang, Xiangqi
Mai, Di
Zhao, Hongze
Zhang, Yang
Peng, Chiyu
Watanabe, Kenji
Taniguchi, Takashi
Sun, Xiaoyu
Dai, Rucheng
Wang, Zhongping
Qin, Wei
Qiao, Zhenhua
Zhang, Zengming
author_facet Wang, Yupeng
An, Jiaqi
Ye, Chunhui
Wang, Xiangqi
Mai, Di
Zhao, Hongze
Zhang, Yang
Peng, Chiyu
Watanabe, Kenji
Taniguchi, Takashi
Sun, Xiaoyu
Dai, Rucheng
Wang, Zhongping
Qin, Wei
Qiao, Zhenhua
Zhang, Zengming
contents Moiré superlattices enable engineering of correlated quantum states through tunable periodic potentials, where twist angle controls periodicity but dynamic potential strength modulation remains challenging. Here, we develop a high-pressure quantum transport technique for van der Waals heterostructures, achieving the ultimate pressure limit (~9 GPa) in encapsulated moiré devices. In aligned graphene/h-BN, we demonstrate that pressure induces a substantial enhancement of the moiré potential strength, evidenced by the suppression of the first valence bandwidth and the near-doubling of the primary band gap. Moreover, we report the first observation of a tertiary gap emerging above 6.4 GPa, verifying theoretical predictions. Our results establish hydrostatic pressure as a universal parameter to reshape moiré band structures. By enabling quantum transport studies at previously inaccessible pressure regimes, this Letter expands the accessible parameter space for exploring correlated phases in moiré systems.
format Preprint
id arxiv_https___arxiv_org_abs_2507_20637
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Pressure-Driven Moiré Potential Enhancement and Tertiary Gap Opening in Graphene/h-BN Heterostructure
Wang, Yupeng
An, Jiaqi
Ye, Chunhui
Wang, Xiangqi
Mai, Di
Zhao, Hongze
Zhang, Yang
Peng, Chiyu
Watanabe, Kenji
Taniguchi, Takashi
Sun, Xiaoyu
Dai, Rucheng
Wang, Zhongping
Qin, Wei
Qiao, Zhenhua
Zhang, Zengming
Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
Moiré superlattices enable engineering of correlated quantum states through tunable periodic potentials, where twist angle controls periodicity but dynamic potential strength modulation remains challenging. Here, we develop a high-pressure quantum transport technique for van der Waals heterostructures, achieving the ultimate pressure limit (~9 GPa) in encapsulated moiré devices. In aligned graphene/h-BN, we demonstrate that pressure induces a substantial enhancement of the moiré potential strength, evidenced by the suppression of the first valence bandwidth and the near-doubling of the primary band gap. Moreover, we report the first observation of a tertiary gap emerging above 6.4 GPa, verifying theoretical predictions. Our results establish hydrostatic pressure as a universal parameter to reshape moiré band structures. By enabling quantum transport studies at previously inaccessible pressure regimes, this Letter expands the accessible parameter space for exploring correlated phases in moiré systems.
title Pressure-Driven Moiré Potential Enhancement and Tertiary Gap Opening in Graphene/h-BN Heterostructure
topic Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2507.20637