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Pressure-Driven Moiré Potential Enhancement and Tertiary Gap Opening in Graphene/h-BN Heterostructure

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Wang, Yupeng, An, Jiaqi, Ye, Chunhui, Wang, Xiangqi, Mai, Di, Zhao, Hongze, Zhang, Yang, Peng, Chiyu, Watanabe, Kenji, Taniguchi, Takashi, Sun, Xiaoyu, Dai, Rucheng, Wang, Zhongping, Qin, Wei, Qiao, Zhenhua, Zhang, Zengming
Formato:	Preprint
Publicado:	2025
Materias:	Strongly Correlated Electrons Mesoscale and Nanoscale Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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