hBN alignment orientation controls moiré strength in rhombohedral graphene

Fuente: arXiv
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Autori principali: Uzan, Matan, Zhi, Weifeng, Bocarsly, Matan, Dong, Junkai, Dutta, Surajit, Auerbach, Nadav, Kander, Niladri Sekhar, Labendik, Mikhail, Myasoedov, Yuri, Huber, Martin E., Watanabe, Kenji, Taniguchi, Takashi, Parker, Daniel E., Zeldov, Eli
Natura: Preprint
Pubblicazione: 2025
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author Uzan, Matan
Zhi, Weifeng
Bocarsly, Matan
Dong, Junkai
Dutta, Surajit
Auerbach, Nadav
Kander, Niladri Sekhar
Labendik, Mikhail
Myasoedov, Yuri
Huber, Martin E.
Watanabe, Kenji
Taniguchi, Takashi
Parker, Daniel E.
Zeldov, Eli
author_facet Uzan, Matan
Zhi, Weifeng
Bocarsly, Matan
Dong, Junkai
Dutta, Surajit
Auerbach, Nadav
Kander, Niladri Sekhar
Labendik, Mikhail
Myasoedov, Yuri
Huber, Martin E.
Watanabe, Kenji
Taniguchi, Takashi
Parker, Daniel E.
Zeldov, Eli
contents Rhombohedral multilayer graphene hosts a rich landscape of correlated symmetry-broken phases, driven by strong interactions from its flat band edges. Aligning to hexagonal boron nitride (hBN) creates a moiré pattern, leading to recent observations of exotic ground states such as integer and fractional quantum anomalous Hall effects. Here, we show that the moiré effects and resulting correlated phase diagrams are critically influenced by a previously underestimated structural choice: the hBN alignment orientation. This binary parameter distinguishes between configurations where the rhombohedral graphene and hBN lattices are aligned near 0° or 180°, a distinction that arises only because both materials break inversion symmetry. Although the two orientations produce the same moiré wavelength, we find their distinct local stacking configurations result in markedly different moiré potential strengths. Using low-temperature transport and scanning SQUID-on-tip magnetometry, we compare nearly identical devices that differ only in alignment orientation and observe sharply contrasting sequences of symmetry-broken states. Theoretical analysis reveals a simple mechanism based on lattice relaxation and the atomic-scale electronic structure of rhombohedral graphene, supported by detailed modeling. These findings establish hBN alignment orientation as a key control parameter in moiré-engineered graphene systems and provide a framework for interpreting both prior and future experiments.
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id arxiv_https___arxiv_org_abs_2507_20647
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle hBN alignment orientation controls moiré strength in rhombohedral graphene
Uzan, Matan
Zhi, Weifeng
Bocarsly, Matan
Dong, Junkai
Dutta, Surajit
Auerbach, Nadav
Kander, Niladri Sekhar
Labendik, Mikhail
Myasoedov, Yuri
Huber, Martin E.
Watanabe, Kenji
Taniguchi, Takashi
Parker, Daniel E.
Zeldov, Eli
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
Rhombohedral multilayer graphene hosts a rich landscape of correlated symmetry-broken phases, driven by strong interactions from its flat band edges. Aligning to hexagonal boron nitride (hBN) creates a moiré pattern, leading to recent observations of exotic ground states such as integer and fractional quantum anomalous Hall effects. Here, we show that the moiré effects and resulting correlated phase diagrams are critically influenced by a previously underestimated structural choice: the hBN alignment orientation. This binary parameter distinguishes between configurations where the rhombohedral graphene and hBN lattices are aligned near 0° or 180°, a distinction that arises only because both materials break inversion symmetry. Although the two orientations produce the same moiré wavelength, we find their distinct local stacking configurations result in markedly different moiré potential strengths. Using low-temperature transport and scanning SQUID-on-tip magnetometry, we compare nearly identical devices that differ only in alignment orientation and observe sharply contrasting sequences of symmetry-broken states. Theoretical analysis reveals a simple mechanism based on lattice relaxation and the atomic-scale electronic structure of rhombohedral graphene, supported by detailed modeling. These findings establish hBN alignment orientation as a key control parameter in moiré-engineered graphene systems and provide a framework for interpreting both prior and future experiments.
title hBN alignment orientation controls moiré strength in rhombohedral graphene
topic Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
url https://arxiv.org/abs/2507.20647