Lifting spin degeneracy in rhombohedral trilayer graphene for high magnetoresistance applications
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arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866912508052242432 |
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| author | Zhang, Lishu Zhou, Jun Yang, Jie Ghosh, Sumit Zhao, Yi-Ming Feng, Yuan Ping Shen, Lei |
| author_facet | Zhang, Lishu Zhou, Jun Yang, Jie Ghosh, Sumit Zhao, Yi-Ming Feng, Yuan Ping Shen, Lei |
| contents | Many exotic properties in rhombohedral (or ABC-stacked) multilayer graphene have recently been reported experimentally. In this Letter, we first reveal the underlying mechanism of spin degeneracy lifting in rhombohedral trilayer graphene. Then, we propose a design concept for all-rhombohedral graphene-based magnetic tunnel junctions (MTJs) by utilizing pristine, back-gated, and top-gated ABC-stacked trilayer graphene, which exhibit semimetallic (conducting), semiconducting (insulating), and half-metallic (ferromagnetic) behavior, respectively. This enables the realization of an "all-in-one" magnetic tunnel junction based entirely on trilayer graphene. This design enables voltage-controlled spintronics (lower power than conventional MTJs) with perfect interfacial matching and sub-nm thickness uniformity across 4-inch wafers. Using first-principles calculations and the non-equilibrium Greens function, we comprehensively study electronic structures and transport properties of these all-graphene MTJs. Furthermore, we demonstrate that their characteristics can be tuned via a perpendicular electric field and electron doping. Our findings offer a new concept for the development of fully graphene-based spintronic devices utilizing the three distinct electronic phases of rhombohedral trilayer graphene. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_21475 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Lifting spin degeneracy in rhombohedral trilayer graphene for high magnetoresistance applications Zhang, Lishu Zhou, Jun Yang, Jie Ghosh, Sumit Zhao, Yi-Ming Feng, Yuan Ping Shen, Lei Materials Science Mesoscale and Nanoscale Physics Many exotic properties in rhombohedral (or ABC-stacked) multilayer graphene have recently been reported experimentally. In this Letter, we first reveal the underlying mechanism of spin degeneracy lifting in rhombohedral trilayer graphene. Then, we propose a design concept for all-rhombohedral graphene-based magnetic tunnel junctions (MTJs) by utilizing pristine, back-gated, and top-gated ABC-stacked trilayer graphene, which exhibit semimetallic (conducting), semiconducting (insulating), and half-metallic (ferromagnetic) behavior, respectively. This enables the realization of an "all-in-one" magnetic tunnel junction based entirely on trilayer graphene. This design enables voltage-controlled spintronics (lower power than conventional MTJs) with perfect interfacial matching and sub-nm thickness uniformity across 4-inch wafers. Using first-principles calculations and the non-equilibrium Greens function, we comprehensively study electronic structures and transport properties of these all-graphene MTJs. Furthermore, we demonstrate that their characteristics can be tuned via a perpendicular electric field and electron doping. Our findings offer a new concept for the development of fully graphene-based spintronic devices utilizing the three distinct electronic phases of rhombohedral trilayer graphene. |
| title | Lifting spin degeneracy in rhombohedral trilayer graphene for high magnetoresistance applications |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2507.21475 |