Phase Competition and Rutile Phase Stabilization of Growing GeO2 Films by MOCVD
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866908472782618624 |
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| author | Rahaman, Imteaz Li, Botong Ellis, Hunter D. Anderson, Kathy Liu, Feng Scarpulla, Michael A. Fu, Kai |
| author_facet | Rahaman, Imteaz Li, Botong Ellis, Hunter D. Anderson, Kathy Liu, Feng Scarpulla, Michael A. Fu, Kai |
| contents | Rutile germanium dioxide (r-GeO2) is an ultra-wide bandgap semiconductor with potential for ambipolar doping, making it a promising candidate for next-generation power electronics and optoelectronics. Growth of phase-pure r-GeO2 films by vapor phase techniques like metalorganic chemical vapor deposition (MOCVD) is challenging because of polymorphic competition from amorphous and quartz GeO2. Here, we introduce seed-driven stepwise crystallization (SDSC) as a segmented growth strategy for obtaining r-GeO2 films on r-TiO2 (001) substrate. SDSC divides the growth into repeated cycles of film deposition and cooling-heating ramps, which suppress the non-rutile phases. We discuss the underlying mechanisms of phase selection during SDSC growth. We demonstrate continuous, phase-pure, partially epitaxial r-GeO2 (001) films exhibiting x-ray rocking curves with a FWHM of 597 arcsec. SDSC-based growth provides a generalizable pathway for selective vapor-phase growth of metastable or unstable phases, offering new opportunities for phase-selective thin-film engineering. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_22430 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Phase Competition and Rutile Phase Stabilization of Growing GeO2 Films by MOCVD Rahaman, Imteaz Li, Botong Ellis, Hunter D. Anderson, Kathy Liu, Feng Scarpulla, Michael A. Fu, Kai Materials Science Rutile germanium dioxide (r-GeO2) is an ultra-wide bandgap semiconductor with potential for ambipolar doping, making it a promising candidate for next-generation power electronics and optoelectronics. Growth of phase-pure r-GeO2 films by vapor phase techniques like metalorganic chemical vapor deposition (MOCVD) is challenging because of polymorphic competition from amorphous and quartz GeO2. Here, we introduce seed-driven stepwise crystallization (SDSC) as a segmented growth strategy for obtaining r-GeO2 films on r-TiO2 (001) substrate. SDSC divides the growth into repeated cycles of film deposition and cooling-heating ramps, which suppress the non-rutile phases. We discuss the underlying mechanisms of phase selection during SDSC growth. We demonstrate continuous, phase-pure, partially epitaxial r-GeO2 (001) films exhibiting x-ray rocking curves with a FWHM of 597 arcsec. SDSC-based growth provides a generalizable pathway for selective vapor-phase growth of metastable or unstable phases, offering new opportunities for phase-selective thin-film engineering. |
| title | Phase Competition and Rutile Phase Stabilization of Growing GeO2 Films by MOCVD |
| topic | Materials Science |
| url | https://arxiv.org/abs/2507.22430 |