Nanoscale Modulation of Flat Bands via Controllable Charge-Density-Waves Defects in 4Hb-TaS2
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866918312520187904 |
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| author | Yang, Wooin Karbasizadeh, Siavash Jeon, Hoyeon Hus, Saban Baddorf, Arthur P. Mu, Sai Berlijn, Tom Zhou, Haidong Ko, Wonhee Li, An-Ping |
| author_facet | Yang, Wooin Karbasizadeh, Siavash Jeon, Hoyeon Hus, Saban Baddorf, Arthur P. Mu, Sai Berlijn, Tom Zhou, Haidong Ko, Wonhee Li, An-Ping |
| contents | Electron correlation is a main driver of exotic quantum phases and their interplay. The 4Hb-TaS2 system, possessing intrinsic heterostructure of 1T- and 1H-TaS2 monolayers, offers a unique opportunity to control electron correlation by distorting the atomic lattice or tuning interlayer coupling. Here, we investigated intrinsically deformed charge-density-waves (CDW) in the 1T layer of 4Hb-TaS2 to elucidate and control their effects on flat bands using scanning tunneling microscopy and spectroscopy (STM/S) combined with first-principles calculations. We identified two types of CDW defects: Type 1 has structural distortion and locally suppressed flat bands, while Type 2 features an increased flat band filling factor of intact CDW structure. Density functional theory calculations indicate that a sulfur vacancy in the 1T layer distorts the CDW structure and gives rise to a Type 1, whereas a sulfur vacancy in the 1H layer reduces the interlayer charge transfer and lead to a Type 2. Furthermore, we demonstrated creating and erasing individual CDW defects via STM manipulation. Our findings provide a pathway to not only tune flat bands but also selectively manipulate the interaction between CDW, the atomic lattice, and interlayer coupling in strongly correlated systems with atomic precision. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_22736 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Nanoscale Modulation of Flat Bands via Controllable Charge-Density-Waves Defects in 4Hb-TaS2 Yang, Wooin Karbasizadeh, Siavash Jeon, Hoyeon Hus, Saban Baddorf, Arthur P. Mu, Sai Berlijn, Tom Zhou, Haidong Ko, Wonhee Li, An-Ping Strongly Correlated Electrons Electron correlation is a main driver of exotic quantum phases and their interplay. The 4Hb-TaS2 system, possessing intrinsic heterostructure of 1T- and 1H-TaS2 monolayers, offers a unique opportunity to control electron correlation by distorting the atomic lattice or tuning interlayer coupling. Here, we investigated intrinsically deformed charge-density-waves (CDW) in the 1T layer of 4Hb-TaS2 to elucidate and control their effects on flat bands using scanning tunneling microscopy and spectroscopy (STM/S) combined with first-principles calculations. We identified two types of CDW defects: Type 1 has structural distortion and locally suppressed flat bands, while Type 2 features an increased flat band filling factor of intact CDW structure. Density functional theory calculations indicate that a sulfur vacancy in the 1T layer distorts the CDW structure and gives rise to a Type 1, whereas a sulfur vacancy in the 1H layer reduces the interlayer charge transfer and lead to a Type 2. Furthermore, we demonstrated creating and erasing individual CDW defects via STM manipulation. Our findings provide a pathway to not only tune flat bands but also selectively manipulate the interaction between CDW, the atomic lattice, and interlayer coupling in strongly correlated systems with atomic precision. |
| title | Nanoscale Modulation of Flat Bands via Controllable Charge-Density-Waves Defects in 4Hb-TaS2 |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2507.22736 |