Quantum confinement effect in Sb thin films
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arXiv
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| Auteurs principaux: | , , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866916872292663296 |
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| author | Wijesinghe, Anuradha Ou, Yongxi Rathore, Anjali Edirisinghe, Chandima Adhikari, Pradip Chen, An-Hsi Gilbert, Dustin Richardella, Anthony Samarth, Nitin Lee, Joon Sue |
| author_facet | Wijesinghe, Anuradha Ou, Yongxi Rathore, Anjali Edirisinghe, Chandima Adhikari, Pradip Chen, An-Hsi Gilbert, Dustin Richardella, Anthony Samarth, Nitin Lee, Joon Sue |
| contents | Antimony (Sb), an element with strong spin-orbit coupling, is predicted to undergo a topological phase transition from a topological semimetal to a topological insulator as its dimensionality approaches the two-dimensional limit, driven by the quantum confinement effect. In this study, we investigate this transition in Sb thin films grown by molecular beam epitaxy, employing electrical transport measurements and angle-resolved photoemission spectroscopy (ARPES). Electrical transport measurements revealed signatures of a modified electronic band structure, including a Hall response with multiple carrier types, a decreasing carrier concentration, and a transition in the curvature of the longitudinal resistance from quadratic to linear with decreasing film thickness. Temperature-dependent magnetoresistance further showed weak antilocalization below 16 K, indicating strong spin-orbit coupling and suggesting the presence of non-trivial topological states. Analysis of the WAL characteristics revealed a single coherent conducting channel and a thickness-dependent change in the phase decoherence mechanism. Complementary ARPES measurements confirmed that reducing the film thickness lifts the conduction band at the M-point, consistent with the emergence of a band gap. These findings support theoretical predictions of a thickness-dependent band structure evolution driven by the quantum confinement effect, providing a foundation for further exploration of topological phase transitions in Sb as well as Bi1-xSbx. The realization of an elemental topological material with simplified stoichiometry and semiconductor compatibility presents a promising avenue for next-generation hybrid systems and applications in spintronics and quantum technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_23014 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Quantum confinement effect in Sb thin films Wijesinghe, Anuradha Ou, Yongxi Rathore, Anjali Edirisinghe, Chandima Adhikari, Pradip Chen, An-Hsi Gilbert, Dustin Richardella, Anthony Samarth, Nitin Lee, Joon Sue Mesoscale and Nanoscale Physics Materials Science Antimony (Sb), an element with strong spin-orbit coupling, is predicted to undergo a topological phase transition from a topological semimetal to a topological insulator as its dimensionality approaches the two-dimensional limit, driven by the quantum confinement effect. In this study, we investigate this transition in Sb thin films grown by molecular beam epitaxy, employing electrical transport measurements and angle-resolved photoemission spectroscopy (ARPES). Electrical transport measurements revealed signatures of a modified electronic band structure, including a Hall response with multiple carrier types, a decreasing carrier concentration, and a transition in the curvature of the longitudinal resistance from quadratic to linear with decreasing film thickness. Temperature-dependent magnetoresistance further showed weak antilocalization below 16 K, indicating strong spin-orbit coupling and suggesting the presence of non-trivial topological states. Analysis of the WAL characteristics revealed a single coherent conducting channel and a thickness-dependent change in the phase decoherence mechanism. Complementary ARPES measurements confirmed that reducing the film thickness lifts the conduction band at the M-point, consistent with the emergence of a band gap. These findings support theoretical predictions of a thickness-dependent band structure evolution driven by the quantum confinement effect, providing a foundation for further exploration of topological phase transitions in Sb as well as Bi1-xSbx. The realization of an elemental topological material with simplified stoichiometry and semiconductor compatibility presents a promising avenue for next-generation hybrid systems and applications in spintronics and quantum technologies. |
| title | Quantum confinement effect in Sb thin films |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2507.23014 |