Cover Image

Deterministic and Scalable Coupling of Single 4H-SiC Spin Defects into Bullseye Cavities

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Bao, Tongyuan, Luo, Qi, Yi, Ailun, Li, Yingjie, Hu, Haibo, Ou, Xin, Zhou, Yu, Song, Qinghai
Format:	Preprint
Published:	2025
Subjects:	Quantum Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Deterministic and Scalable Coupling of Single 4H‐SiC Spin Defects into Bullseye Cavities
by: Tongyuan Bao, et al.
Published: (2025)

Tunable cavity coupling to spin defects in 4H-silicon-carbide-on-insulator platform
by: Bao, Tongyuan, et al.
Published: (2024)

Room-Temperature entangled quantum processor on integrated semiconductor photonics platform
by: Hu, Haibo, et al.
Published: (2023)

Octave‐Spanning, Deterministic Single Soliton Generation in 4H‐Silicon Carbide‐On‐Insulator Microring Resonators
by: Yi Zheng, et al.
Published: (2026)

Strain Enhanced Spin Readout Contrast in Silicon Carbide Membranes
by: Hu, Haibo, et al.
Published: (2025)

Optically Active Point Defects in 4H–SiC: Identification of Microscopic Mechanisms and Prospects for Quantum Applications
by: Xin Zhao, et al.
Published: (2025)

Effect of PyC/BN interfacial phases on mechanical behavior of SiC/SiC composites
by: Haipeng Qiu, et al.
Published: (2024)

A hybrid single quantum dot coupled cavity on a CMOS-compatible SiC photonic chip for Purcell-enhanced deterministic single-photon emission
by: Zhu, Yifan, et al.
Published: (2024)

Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
by: Jousseaume, Yann, et al.
Published: (2024)

Strain Engineering for Transition Metal Defects in SiC
by: Tissot, Benedikt, et al.
Published: (2023)

The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission
by: Bulancea-Lindvall, Oscar, et al.
Published: (2023)

Study on the Damage of 6H‐SiC During the Grinding Process by C‐Ion Implantation Based on Molecular Dynamics
by: Qi Zheng, et al.
Published: (2025)

Influence of polycarbosilane composition on the properties of SiC/SiC composite fabricated by precursor infiltration and pyrolysis process
by: Yi Chen, et al.
Published: (2024)

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector
by: Jiang, Zhenyu, et al.
Published: (2025)

The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H‐SiC Devices
by: Lan Luo, et al.
Published: (2025)

Selective Undercut of Undoped Optical Membranes for Spin-Active Color Centers in 4H-SiC
by: Dietz, Jonathan R., et al.
Published: (2024)

Effect of BN interfacial layer on the mechanical behavior of SiC fiber reinforced SiC ceramic matrix composites
by: Mingwei Chen, et al.
Published: (2024)

Host dependence of PL5 ensemble in 4H-SiC
by: Li, Jiajun, et al.
Published: (2025)

Preparation of jointed composites with interconnected SiC nanowires network for nuclear SiC fiber reinforced SiC composites
by: Meihan Ren, et al.
Published: (2024)

Controlled fabrication of freestanding monolayer SiC by electron irradiation
by: Da, Yunli, et al.
Published: (2024)

Ab Initio Study of Erbium Point Defects in 4H-SiC for Quantum Devices
by: Kuban, Michael
Published: (2026)

Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates
by: Horn, Connor P, et al.
Published: (2024)

Charge Collection Performance of 4H-SiC LGAD
by: Zhao, Sen, et al.
Published: (2024)

Towards Identifying the PL6 Center in SiC: From First-Principles Screening to Hyperfine Validation of Competing Defect Candidates
by: Zhao, Xin, et al.
Published: (2025)

Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions
by: Shafizadeh, Danial, et al.
Published: (2026)

Neural‐Network Potential for Defect Formation Induced by Knock‐On Irradiation Damage in 4H‐SiC
by: Wei Liu, et al.
Published: (2025)

Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
by: Hessenauer, Jannis, et al.
Published: (2025)

Spontaneous Parametric Down‐Conversion in 4H‐SiC Integrated Platform
by: Xiaodong Shi, et al.
Published: (2025)

4H-SiC PIN detector for alpha particles from room temperature to 90 °C
by: Li, Xingchen, et al.
Published: (2025)

Nanoscale Strain Evolution and Grain Boundary-Mediated Defect Sink Behavior in Irradiated SiC: Insights from N-PED and DFT
by: Daghbouj, Nabil, et al.
Published: (2025)

Study on Grinding Wheel Wear and Machining Quality in Ultrasonic Vibration Helical Grinding of SiC f /SiC Composites
by: Junjie Zhou, et al.
Published: (2026)

The study of 4H-SiC LGAD after proton radiation
by: Zhao, Sen, et al.
Published: (2025)

Development of Segmented 4H-SiC LGADs
by: Kráčmar, Vojtěch, et al.
Published: (2026)

Mechanism of Polytype Transformation and Related Defect Formation Induced by Carbon Inclusions in 4H‐SiC Crystal
by: Wenbin Zhang, et al.
Published: (2026)

BN recession and recession cessation in SiC/BN/SiC composites
by: Shingo Kanazawa, et al.
Published: (2025)

Influence of H 2 Flow Rate and Growth Temperature on Homoepitaxial Growth and Doping of 4H‐SiC by Chemical Vapor Deposition
by: Nan Zhang, et al.
Published: (2026)

Octave-spanning, deterministic single soliton generation in 4H-silicon carbide-on-insulator microring resonators
by: Zheng, Yi, et al.
Published: (2025)

Study on laser ablation quality and removal mechanism of SiC f /SiC composites by wavelength and thermal effect equation
by: Juan Song, et al.
Published: (2025)

Interfacial Coupling Controls Molecular Epitaxy of HMTP on Graphene/SiC
by: Varshney, Devanshu, et al.
Published: (2026)

Integrated time-bin entangled quantum light source on a 4H-SiC microring chip
by: Zeng, Hong, et al.
Published: (2026)