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Main Authors: Scaletta, Dominick S., Tran, Ngoc Thanh Mai, Musso, Marta, Jimenez, Valery Ortiz, Hill, Heather M., Jarrett, Dean G., Ortolano, Massimo, Richter, Curt A., Newell, David B., Rigosi, Albert F.
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2507.23630
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author Scaletta, Dominick S.
Tran, Ngoc Thanh Mai
Musso, Marta
Jimenez, Valery Ortiz
Hill, Heather M.
Jarrett, Dean G.
Ortolano, Massimo
Richter, Curt A.
Newell, David B.
Rigosi, Albert F.
author_facet Scaletta, Dominick S.
Tran, Ngoc Thanh Mai
Musso, Marta
Jimenez, Valery Ortiz
Hill, Heather M.
Jarrett, Dean G.
Ortolano, Massimo
Richter, Curt A.
Newell, David B.
Rigosi, Albert F.
contents This work elaborates on how one may develop high-resistance quantized Hall array resistance standards (QHARS) by using star-mesh transformations for element count minimization. Refinements are made on a recently developed mathematical framework optimizing QHARS device designs based on full, symmetric recursion by reconciling approximate device values with exact effective quantized resistances found by simulation and measurement. Furthermore, this work explores the concept of fractal dimension, clarifying the benefits of both full and partial recursions in QHARS devices. Three distinct partial recursion cases are visited for a near-1 Gigaohm QHARS device. These partial recursions, analyzed in the context of their fractal dimensions, offer increased flexibility in accessing desired resistance values within a specific neighborhood compared to full recursion methods, though at the cost of the number of required devices.
format Preprint
id arxiv_https___arxiv_org_abs_2507_23630
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Influences of the Minkowski-Bouligand Dimension on Graphene-Based Quantum Hall Array Designs
Scaletta, Dominick S.
Tran, Ngoc Thanh Mai
Musso, Marta
Jimenez, Valery Ortiz
Hill, Heather M.
Jarrett, Dean G.
Ortolano, Massimo
Richter, Curt A.
Newell, David B.
Rigosi, Albert F.
Mesoscale and Nanoscale Physics
Applied Physics
This work elaborates on how one may develop high-resistance quantized Hall array resistance standards (QHARS) by using star-mesh transformations for element count minimization. Refinements are made on a recently developed mathematical framework optimizing QHARS device designs based on full, symmetric recursion by reconciling approximate device values with exact effective quantized resistances found by simulation and measurement. Furthermore, this work explores the concept of fractal dimension, clarifying the benefits of both full and partial recursions in QHARS devices. Three distinct partial recursion cases are visited for a near-1 Gigaohm QHARS device. These partial recursions, analyzed in the context of their fractal dimensions, offer increased flexibility in accessing desired resistance values within a specific neighborhood compared to full recursion methods, though at the cost of the number of required devices.
title Influences of the Minkowski-Bouligand Dimension on Graphene-Based Quantum Hall Array Designs
topic Mesoscale and Nanoscale Physics
Applied Physics
url https://arxiv.org/abs/2507.23630