Hybrid Scandium Aluminum Nitride/Silicon Nitride Integrated Photonic Circuits
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arXiv
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| Format: | Preprint |
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2025
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| author | Liu, Jiangnan Liu, Shuai Al-Hallak, Abdur-Raheem Yu, Huabin Ye, Zhengwei Zhang, Yuheng Zhang, Zheshen Mi, Zetian |
| author_facet | Liu, Jiangnan Liu, Shuai Al-Hallak, Abdur-Raheem Yu, Huabin Ye, Zhengwei Zhang, Yuheng Zhang, Zheshen Mi, Zetian |
| contents | Scandium-doped aluminum nitride has recently emerged as a promising material for quantum photonic integrated circuits (PICs) due to its unique combination of strong second-order nonlinearity, ferroelectricity, piezoelectricity, and complementary metal-oxide-semiconductor (CMOS) compatibility. However, the relatively high optical loss reported to date-typically above 2.4 dB/cm-remains a key challenge that limits its widespread application in low-loss PICs. Here, we present a monolithically integrated $\mathrm{Si}_3\mathrm{N}_4$-ScAlN waveguide platform that overcomes this limitation. By confining light within an etched $\mathrm{Si}_3\mathrm{N}_4$ waveguide while preserving the functional properties of the underlying ScAlN layer, we achieve an intrinsic quality factor of $Q_{\mathrm{i}} = 3.35 \times 10^5$, corresponding to a propagation loss of 1.03 dB/cm-comparable to that of commercial single-mode silicon-on-insulator (SOI) waveguides. This hybrid architecture enables low-loss and scalable fabrication while retaining the advanced functionalities offered by ScAlN, such as ferroelectricity and piezoelectricity. Our results establish a new pathway for ScAlN-based PICs with potential applications in high-speed optical communication, modulation, sensing, nonlinear optics, and quantum optics within CMOS-compatible platforms. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_00314 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Hybrid Scandium Aluminum Nitride/Silicon Nitride Integrated Photonic Circuits Liu, Jiangnan Liu, Shuai Al-Hallak, Abdur-Raheem Yu, Huabin Ye, Zhengwei Zhang, Yuheng Zhang, Zheshen Mi, Zetian Optics Materials Science Scandium-doped aluminum nitride has recently emerged as a promising material for quantum photonic integrated circuits (PICs) due to its unique combination of strong second-order nonlinearity, ferroelectricity, piezoelectricity, and complementary metal-oxide-semiconductor (CMOS) compatibility. However, the relatively high optical loss reported to date-typically above 2.4 dB/cm-remains a key challenge that limits its widespread application in low-loss PICs. Here, we present a monolithically integrated $\mathrm{Si}_3\mathrm{N}_4$-ScAlN waveguide platform that overcomes this limitation. By confining light within an etched $\mathrm{Si}_3\mathrm{N}_4$ waveguide while preserving the functional properties of the underlying ScAlN layer, we achieve an intrinsic quality factor of $Q_{\mathrm{i}} = 3.35 \times 10^5$, corresponding to a propagation loss of 1.03 dB/cm-comparable to that of commercial single-mode silicon-on-insulator (SOI) waveguides. This hybrid architecture enables low-loss and scalable fabrication while retaining the advanced functionalities offered by ScAlN, such as ferroelectricity and piezoelectricity. Our results establish a new pathway for ScAlN-based PICs with potential applications in high-speed optical communication, modulation, sensing, nonlinear optics, and quantum optics within CMOS-compatible platforms. |
| title | Hybrid Scandium Aluminum Nitride/Silicon Nitride Integrated Photonic Circuits |
| topic | Optics Materials Science |
| url | https://arxiv.org/abs/2508.00314 |