Etching-to-deposition transition in SiO$_2$/Si$_3$N$_4$ using CH$_x$F$_y$ ion-based plasma etching: An atomistic study with neural network potentials

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	An, Hyungmin, Oh, Sangmin, Lee, Dongheon, Ko, Jae-hyeon, Oh, Dongyean, Hong, Changho, Han, Seungwu
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Internet

https://arxiv.org/abs/2508.00327