Precision high-speed quantum logic with holes on a natural silicon foundry platform

Fuente: arXiv
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Main Authors: Vorreiter, Isaac, Huang, Jonathan Y., Liles, Scott D., Hillier, Joe, Li, Ruoyu, Raes, Bart, Kubicek, Stefan, Jussot, Julien, Beyne, Sofie, Godfrin, Clement, Sharma, Sugandha, Wan, Danny, Stuyck, Nard Dumoulin, Gilbert, Will, Yang, Chih Hwan, Dzurak, Andrew S., De Greve, Kristiaan, Hamilton, Alexander R.
Format: Preprint
Published: 2025
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author Vorreiter, Isaac
Huang, Jonathan Y.
Liles, Scott D.
Hillier, Joe
Li, Ruoyu
Raes, Bart
Kubicek, Stefan
Jussot, Julien
Beyne, Sofie
Godfrin, Clement
Sharma, Sugandha
Wan, Danny
Stuyck, Nard Dumoulin
Gilbert, Will
Yang, Chih Hwan
Dzurak, Andrew S.
De Greve, Kristiaan
Hamilton, Alexander R.
author_facet Vorreiter, Isaac
Huang, Jonathan Y.
Liles, Scott D.
Hillier, Joe
Li, Ruoyu
Raes, Bart
Kubicek, Stefan
Jussot, Julien
Beyne, Sofie
Godfrin, Clement
Sharma, Sugandha
Wan, Danny
Stuyck, Nard Dumoulin
Gilbert, Will
Yang, Chih Hwan
Dzurak, Andrew S.
De Greve, Kristiaan
Hamilton, Alexander R.
contents Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst retaining all the salient features of a quantum dot qubit architecture. However, silicon hole spin qubits are not as advanced as electrons, due to increased susceptibility to disorder and more complex spin physics. Here we demonstrate single-qubit gate fidelities up to 99.8% and a two-qubit gate quality factor of 240, indicating a physical fidelity limit of 99.7%. These results represent the highest performance reported in natural silicon to date, made possible by fast qubit control, exchange pulsing, and industrial-grade fabrication. Notably, we achieve these results in a near-identical device as used for highly reproducible, high-fidelity electron spin qubits. With isotopic purification and device-level optimisations in the future, our hole spin qubits are poised to unlock a new operation regime for quantum CMOS architectures.
format Preprint
id arxiv_https___arxiv_org_abs_2508_00446
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Precision high-speed quantum logic with holes on a natural silicon foundry platform
Vorreiter, Isaac
Huang, Jonathan Y.
Liles, Scott D.
Hillier, Joe
Li, Ruoyu
Raes, Bart
Kubicek, Stefan
Jussot, Julien
Beyne, Sofie
Godfrin, Clement
Sharma, Sugandha
Wan, Danny
Stuyck, Nard Dumoulin
Gilbert, Will
Yang, Chih Hwan
Dzurak, Andrew S.
De Greve, Kristiaan
Hamilton, Alexander R.
Mesoscale and Nanoscale Physics
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst retaining all the salient features of a quantum dot qubit architecture. However, silicon hole spin qubits are not as advanced as electrons, due to increased susceptibility to disorder and more complex spin physics. Here we demonstrate single-qubit gate fidelities up to 99.8% and a two-qubit gate quality factor of 240, indicating a physical fidelity limit of 99.7%. These results represent the highest performance reported in natural silicon to date, made possible by fast qubit control, exchange pulsing, and industrial-grade fabrication. Notably, we achieve these results in a near-identical device as used for highly reproducible, high-fidelity electron spin qubits. With isotopic purification and device-level optimisations in the future, our hole spin qubits are poised to unlock a new operation regime for quantum CMOS architectures.
title Precision high-speed quantum logic with holes on a natural silicon foundry platform
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2508.00446