Dynamic Interfacial Quantum Dipoles in Charge Transfer Heterostructures
Fuente:
arXiv
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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866916877365673984 |
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| author | Liu, Ziyu Boström, Emil Viñas Sun, Dihao Pack, Jordan Cothrine, Matthew Watanabe, Kenji Taniguchi, Takashi Mandrus, David G. Rubio, Angel Dean, Cory R. |
| author_facet | Liu, Ziyu Boström, Emil Viñas Sun, Dihao Pack, Jordan Cothrine, Matthew Watanabe, Kenji Taniguchi, Takashi Mandrus, David G. Rubio, Angel Dean, Cory R. |
| contents | Hysteretic gate responses of two-dimensional material heterostructures serve as sensitive probes of the underlying electronic states and hold significant promise for the development of novel nanoelectronic devices. Here we identify a new mechanism of hysteretic behavior in graphene/$h$BN/$α$-$\mathrm{RuCl_3}$ charge transfer field effect devices. The hysteresis loop exhibits a sharp onset under low temperatures and evolves symmetrically relative to the charge transfer equilibrium. Unlike conventional flash memory devices, the charge transfer heterostructure features a transparent tunneling barrier and its hysteretic gate response is induced by the dynamic tuning of interfacial dipoles originating from quantum exchange interactions. The system acts effectively as a ferroelectric and gives rise to remarkable tunability of the hysteretic gate response under external electrical bias. Our work unveils a novel mechanism for engineering hysteretic behaviors via dynamic interfacial quantum dipoles. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_01027 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Dynamic Interfacial Quantum Dipoles in Charge Transfer Heterostructures Liu, Ziyu Boström, Emil Viñas Sun, Dihao Pack, Jordan Cothrine, Matthew Watanabe, Kenji Taniguchi, Takashi Mandrus, David G. Rubio, Angel Dean, Cory R. Mesoscale and Nanoscale Physics Hysteretic gate responses of two-dimensional material heterostructures serve as sensitive probes of the underlying electronic states and hold significant promise for the development of novel nanoelectronic devices. Here we identify a new mechanism of hysteretic behavior in graphene/$h$BN/$α$-$\mathrm{RuCl_3}$ charge transfer field effect devices. The hysteresis loop exhibits a sharp onset under low temperatures and evolves symmetrically relative to the charge transfer equilibrium. Unlike conventional flash memory devices, the charge transfer heterostructure features a transparent tunneling barrier and its hysteretic gate response is induced by the dynamic tuning of interfacial dipoles originating from quantum exchange interactions. The system acts effectively as a ferroelectric and gives rise to remarkable tunability of the hysteretic gate response under external electrical bias. Our work unveils a novel mechanism for engineering hysteretic behaviors via dynamic interfacial quantum dipoles. |
| title | Dynamic Interfacial Quantum Dipoles in Charge Transfer Heterostructures |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2508.01027 |