Cryogenic rf-to-microwave transducer based on a dc-biased electromechanical system
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866911409987649536 |
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| author | Patange, Himanshu Gerashchenko, Kyrylo Rousseau, Rémi Manset, Paul Balembois, Léo Capelle, Thibault Deléglise, Samuel Jacqmin, Thibaut |
| author_facet | Patange, Himanshu Gerashchenko, Kyrylo Rousseau, Rémi Manset, Paul Balembois, Léo Capelle, Thibault Deléglise, Samuel Jacqmin, Thibaut |
| contents | We report a two-stage, heterodyne rf-to-microwave transducer that combines a tunable electrostatic pre-amplifier with a superconducting electromechanical cavity. A metalized Si$_3$N$_4$ membrane (3 MHz frequency) forms the movable plate of a vacuum-gap capacitor in a microwave LC resonator. A dc bias across the gap converts any small rf signal into a resonant electrostatic force proportional to the bias, providing a voltage-controlled gain that multiplies the cavity's intrinsic electromechanical gain. In a flip-chip device with a 1.5 $\mathrmμ$m gap operated at 10 mK we observe dc-tunable anti-spring shifts, and rf-to-microwave transduction at 49 V bias, achieving a charge sensitivity of 87 $\mathrmμ$e/$\sqrt{\mathrm{Hz}}$ (0.9 nV/$\sqrt{\mathrm{Hz}}$). Extrapolation to sub-micron gaps and state-of-the-art $Q>10^8$ membrane resonators predicts sub-200 fV/$\sqrt{\mathrm{Hz}}$ sensitivity, establishing dc-biased electromechanics as a practical route towards quantum-grade rf electrometers and low-noise modular heterodyne links for superconducting microwave circuits and charge or voltage sensing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_01066 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Cryogenic rf-to-microwave transducer based on a dc-biased electromechanical system Patange, Himanshu Gerashchenko, Kyrylo Rousseau, Rémi Manset, Paul Balembois, Léo Capelle, Thibault Deléglise, Samuel Jacqmin, Thibaut Quantum Physics We report a two-stage, heterodyne rf-to-microwave transducer that combines a tunable electrostatic pre-amplifier with a superconducting electromechanical cavity. A metalized Si$_3$N$_4$ membrane (3 MHz frequency) forms the movable plate of a vacuum-gap capacitor in a microwave LC resonator. A dc bias across the gap converts any small rf signal into a resonant electrostatic force proportional to the bias, providing a voltage-controlled gain that multiplies the cavity's intrinsic electromechanical gain. In a flip-chip device with a 1.5 $\mathrmμ$m gap operated at 10 mK we observe dc-tunable anti-spring shifts, and rf-to-microwave transduction at 49 V bias, achieving a charge sensitivity of 87 $\mathrmμ$e/$\sqrt{\mathrm{Hz}}$ (0.9 nV/$\sqrt{\mathrm{Hz}}$). Extrapolation to sub-micron gaps and state-of-the-art $Q>10^8$ membrane resonators predicts sub-200 fV/$\sqrt{\mathrm{Hz}}$ sensitivity, establishing dc-biased electromechanics as a practical route towards quantum-grade rf electrometers and low-noise modular heterodyne links for superconducting microwave circuits and charge or voltage sensing. |
| title | Cryogenic rf-to-microwave transducer based on a dc-biased electromechanical system |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2508.01066 |