Realization of Phonon FETs in 2D material through Engineered Acoustic Mismatch
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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866908476743090176 |
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| author | Feng, H. F. Xu, Z. Y. Liu, B. Guo, Zhi-Xin |
| author_facet | Feng, H. F. Xu, Z. Y. Liu, B. Guo, Zhi-Xin |
| contents | Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly underdeveloped, with effectively reversible thermal conductivity modulation posing a significant challenge. Herein, we propose a novel PFET architecture enabling reversible thermal conductivity modulation. This design integrates a substrate in the central region with a two-dimensional (2D) material to form an engineered junction, exploiting differences in out-of-plane acoustic phonon properties to regulate heat flow. Molecular dynamics simulations of a graphene (Gr)/hexagonal boron nitride (h-BN) junction demonstrate a substantial thermal conductivity reduction up to 44-fold at 100 K. The effect is maintained at room temperature and across diverse substrates, confirming robustness. This work establishes a new strategy for dynamic thermal management in electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_01157 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Realization of Phonon FETs in 2D material through Engineered Acoustic Mismatch Feng, H. F. Xu, Z. Y. Liu, B. Guo, Zhi-Xin Computational Physics Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly underdeveloped, with effectively reversible thermal conductivity modulation posing a significant challenge. Herein, we propose a novel PFET architecture enabling reversible thermal conductivity modulation. This design integrates a substrate in the central region with a two-dimensional (2D) material to form an engineered junction, exploiting differences in out-of-plane acoustic phonon properties to regulate heat flow. Molecular dynamics simulations of a graphene (Gr)/hexagonal boron nitride (h-BN) junction demonstrate a substantial thermal conductivity reduction up to 44-fold at 100 K. The effect is maintained at room temperature and across diverse substrates, confirming robustness. This work establishes a new strategy for dynamic thermal management in electronics. |
| title | Realization of Phonon FETs in 2D material through Engineered Acoustic Mismatch |
| topic | Computational Physics |
| url | https://arxiv.org/abs/2508.01157 |