Study of Optical Properties of MOCVD-Grown Rutile GeO2 Films
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| Format: | Preprint |
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2025
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| _version_ | 1866916877644595200 |
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| author | Rahaman, Imteaz Bolda, Anthony Li, Botong Ellis, Hunter D. Fu, Kai |
| author_facet | Rahaman, Imteaz Bolda, Anthony Li, Botong Ellis, Hunter D. Fu, Kai |
| contents | Rutile germanium dioxide (r-GeO$_2$) is a promising ultra-wide bandgap (UWBG) semiconductor, offering a high theoretical Baliga figure of merit, potential for p-type doping, and favorable thermal and electrical properties. In this work, we present a comprehensive optical investigation of crystalline r-GeO$_2$ thin films grown on r-TiO$_2$ (001) substrates via metal-organic chemical vapor deposition (MOCVD). Cathodoluminescence (CL) spectroscopy reveals broad visible emissions with distinct peaks near 470~nm and 520~nm. CL mapping indicates enhanced emission intensity in regions with larger crystalline domains, highlighting the correlation between domain size and optical quality. X-ray photoelectron spectroscopy (XPS) confirms the presence of Ge$^{4+}$ oxidation state and provides a bandgap estimation of $\sim$4.75~eV based on valence band and secondary electron cutoff analysis. UV--Vis transmittance measurements show a sharp absorption edge near 250--260~nm, corresponding to an optical bandgap in the range of 4.81--5.0~eV. These findings offer valuable insights into the defect-related emission behavior and band-edge characteristics of r-GeO$_2$, reinforcing its potential for future applications in power electronics and deep-ultraviolet optoelectronic devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2508_01289 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Study of Optical Properties of MOCVD-Grown Rutile GeO2 Films Rahaman, Imteaz Bolda, Anthony Li, Botong Ellis, Hunter D. Fu, Kai Materials Science Rutile germanium dioxide (r-GeO$_2$) is a promising ultra-wide bandgap (UWBG) semiconductor, offering a high theoretical Baliga figure of merit, potential for p-type doping, and favorable thermal and electrical properties. In this work, we present a comprehensive optical investigation of crystalline r-GeO$_2$ thin films grown on r-TiO$_2$ (001) substrates via metal-organic chemical vapor deposition (MOCVD). Cathodoluminescence (CL) spectroscopy reveals broad visible emissions with distinct peaks near 470~nm and 520~nm. CL mapping indicates enhanced emission intensity in regions with larger crystalline domains, highlighting the correlation between domain size and optical quality. X-ray photoelectron spectroscopy (XPS) confirms the presence of Ge$^{4+}$ oxidation state and provides a bandgap estimation of $\sim$4.75~eV based on valence band and secondary electron cutoff analysis. UV--Vis transmittance measurements show a sharp absorption edge near 250--260~nm, corresponding to an optical bandgap in the range of 4.81--5.0~eV. These findings offer valuable insights into the defect-related emission behavior and band-edge characteristics of r-GeO$_2$, reinforcing its potential for future applications in power electronics and deep-ultraviolet optoelectronic devices. |
| title | Study of Optical Properties of MOCVD-Grown Rutile GeO2 Films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2508.01289 |