Significant Mobility Enhancement in Coupled AlGaN/GaN Quantum Wells considering Inter-Well Distance and Asymmetric Widths
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866908477741334528 |
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| author | Dat, Le Tri Tai, Tran Trong Van Tuan, Truong Van Tai, Vo Vy, Nguyen Duy |
| author_facet | Dat, Le Tri Tai, Tran Trong Van Tuan, Truong Van Tai, Vo Vy, Nguyen Duy |
| contents | We demonstrate that coupled AlGaN/GaN quantum wells with asymmetric widths ($L_1-L_2<30 $ A achieve up to 4.5 times higher mobility than single wells at optimal separation (d = 100 A). Crucially, mobility surpasses single wells when d>40 A reversing the trend at smaller distances. This enhancement stems from double-layer screening that suppresses remote/background impurities and dislocations, while LO phonon scattering remains unaffected. For identical wells, coupled systems underperform single wells at d<40 A but exceed them beyond this threshold. Peak gains occur at cryogenic temperatures (77 K). Our results provide a robust theoretical framework to optimize mobility in AlGaN/GaN heterostructures, reducing experimental trial-and-error in quantum device engineering. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_02024 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Significant Mobility Enhancement in Coupled AlGaN/GaN Quantum Wells considering Inter-Well Distance and Asymmetric Widths Dat, Le Tri Tai, Tran Trong Van Tuan, Truong Van Tai, Vo Vy, Nguyen Duy Mesoscale and Nanoscale Physics We demonstrate that coupled AlGaN/GaN quantum wells with asymmetric widths ($L_1-L_2<30 $ A achieve up to 4.5 times higher mobility than single wells at optimal separation (d = 100 A). Crucially, mobility surpasses single wells when d>40 A reversing the trend at smaller distances. This enhancement stems from double-layer screening that suppresses remote/background impurities and dislocations, while LO phonon scattering remains unaffected. For identical wells, coupled systems underperform single wells at d<40 A but exceed them beyond this threshold. Peak gains occur at cryogenic temperatures (77 K). Our results provide a robust theoretical framework to optimize mobility in AlGaN/GaN heterostructures, reducing experimental trial-and-error in quantum device engineering. |
| title | Significant Mobility Enhancement in Coupled AlGaN/GaN Quantum Wells considering Inter-Well Distance and Asymmetric Widths |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2508.02024 |