:: Library Catalog

Image de couverture de livre

Enregistré dans:

Détails bibliographiques
Auteurs principaux:	Chen, Yu-Chang, Ling, Chia-Yang, Lin, Ken-Ming
Format:	Preprint
Publié:	2025
Sujets:	Mesoscale and Nanoscale Physics
Accès en ligne:	https://arxiv.org/abs/2508.02380
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

Documents similaires

Spatially Mapping Phonon Drag in Ultrascaled 5-nm Silicon Nanowire Field-Effect Transistor Based on a Quantum Hydrodynamic Formalism
par: Rezgui, Houssem, et autres
Publié: (2025)

Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor
par: Fuhrer, Michael S., et autres
Publié: (2022)

Excitons in Atomically Thin TMD in Electric and Magnetic Fields
par: Engdahl, Jack N., et autres
Publié: (2024)

Quantization of Charge Carriers in Conduction Channels of Si-Based Field-Effect Transistors for Multinary Computation
par: Xu, P., et autres
Publié: (2024)

Sub-nm Curvature Unlocks Quantum Flexoelectricity in Graphene
par: Iyengar, Sathvik Ajay, et autres
Publié: (2025)

Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS
par: Xu, Linqiang, et autres
Publié: (2024)

Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications
par: Xu, Linqiang, et autres
Publié: (2024)

Band Gap Engineering of Nitrogen-Doped Monolayer WSe$_2$ Superlattice and its application to Field Effect Transistor
par: Lo, Yi-Cheng, et autres
Publié: (2025)

Quantum transport calculations: An effective medium theory based on the projector augmented wave method with the plane-wave basis
par: Lin, Yi-Cheng, et autres
Publié: (2025)

Quantum Enhanced Josephson Junction Field-Effect Transistors for Logic Applications
par: Pan, W., et autres
Publié: (2024)

Large-scale characterization of Single-Hole Transistors in 22-nm FDSOI CMOS Technology
par: Swift, Thomas H., et autres
Publié: (2025)

The Ferroelectric Superconducting Field Effect Transistor
par: Paghi, Alessandro, et autres
Publié: (2025)

An Approach to Use Depletion Charges for Modifying Band Profiles for Field-Effect Transistors
par: Xu, P., et autres
Publié: (2025)

Influence of Carrier-Carrier Interactions on the Sub-threshold Swing of Band-to-Band Tunnelling Transistors
par: Xia, Chen Hao, et autres
Publié: (2024)

Deep Learning Accelerated First-Principles Quantum Transport Simulations at Nonequilibrium State
par: Tang, Zili, et autres
Publié: (2025)

Deep Learning Accelerated Quantum Transport Simulations in Nanoelectronics: From Break Junctions to Field-Effect Transistors
par: Zou, Jijie, et autres
Publié: (2024)

Impact of atomic reconstruction on optical spectra of twisted TMD homobilayers
par: Hagel, Joakim, et autres
Publié: (2023)

Dielectrophoresis-Enhanced Graphene Field-Effect Transistors for Nano-Analyte Sensing
par: Izquierdo, Nezhueyotl, et autres
Publié: (2024)

Impact of charge transfer excitons on unidirectional exciton transport in lateral TMD heterostructures
par: Rosati, Roberto, et autres
Publié: (2025)

CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors
par: Schneider, Daniel S., et autres
Publié: (2023)

Variability and Reliability of Graphene Field-Effect Transistors with CaF2 Insulators
par: Illarionov, Yury Yu., et autres
Publié: (2023)

Excitonic thermalization bottleneck in twisted TMD heterostructures
par: Meneghini, Giuseppe, et autres
Publié: (2024)

The Classical-to-Quantum Crossover in strain-induced ferroelectric transition in SrTiO$_3$ membranes
par: Li, Jiarui, et autres
Publié: (2025)

Interfacial Charge Transfer Driven Enhanced Transport and Thermal Stability in Graphene-MoS2 Vertical Heterostructure Field-Effect Transistors
par: Panigrahi, Ashis Kumar, et autres
Publié: (2026)

A New Direction for First-Principles Device Simulations
par: Kim, Yong-Hoon, et autres
Publié: (2024)

Hole to Electron Crossover in a (Cd,Mn)Te Quantum Well through Surface Metallization
par: Dydniański, Amadeusz, et autres
Publié: (2025)

Excitonic response in TMD heterostructures from first-principles: impact of stacking, twisting, and interlayer distance
par: Reho, R., et autres
Publié: (2024)

Strained 2D TMD lateral heterojunctions via grayscale thermal-Scanning Probe Lithography
par: Zambito, G., et autres
Publié: (2025)

Sub-10 nm Quantification of Spin and Orbital Magnetic Moment Across the Metamagnetic Phase Transition in FeRh Using EMCD
par: Hajduček, Jan, et autres
Publié: (2025)

First Principles Study of Electronic Structure and Transport in Graphene Grain Boundaries
par: Lorentzen, Aleksander Bach, et autres
Publié: (2024)

First-Principles Nanocapacitor Simulations of the Optical Dielectric Constant in Water Ice
par: Mannino, Anthony, et autres
Publié: (2025)

Imaging the Sub-Moiré Potential Landscape using an Atomic Single Electron Transistor
par: Klein, Dahlia R., et autres
Publié: (2024)

Theory of Integer Quantum Hall Effect in Irrational Magnetic Field
par: Miao, Zhao-Wen, et autres
Publié: (2026)

Formalizing Poisson-Boltzmann Theory for Field-Tunable Nanofluidic Devices
par: Zhao, Zhongyuan, et autres
Publié: (2026)

Layer-Selective Proximity Symmetry Breaking Enables Anomalous and Nonlinear Hall Responses in 1H-TMD Metals
par: Wicaksono, Yusuf, et autres
Publié: (2026)

First-Principles Insights into Excitonic and Electron-Phonon Effects in van der Waals Heterostructures
par: Mohebpour, Mohammad Ali, et autres
Publié: (2025)

Bias-Engineered Synthetic Antiferromagnets Hosting sub-20 nm Zero-Field Skyrmions at Room Temperature
par: Darwin, Emily, et autres
Publié: (2026)

Current-Induced Circular Dichroism on Metallic Surfaces: A First-Principles Study
par: Mahfouzi, Farzad, et autres
Publié: (2024)

Spin Relaxation and Diffusion in Monolayer 1T'-WTe$_2$ from First-Principles
par: Xu, Junqing, et autres
Publié: (2024)

Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
par: Moghe, Aditi Raman, et autres
Publié: (2026)