Oxide Interface-Based Polymorphic Electronic Devices for Neuromorphic Computing

Fuente: arXiv
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Main Authors: Pradhan, Soumen, Miller, Kirill, Hartmann, Fabian, Spring, Merit, Gabel, Judith, Leikert, Berengar, Kuhn, Silke, Kamp, Martin, Lopez-Richard, Victor, Sing, Michael, Claessen, Ralph, Höfling, Sven
Format: Preprint
Published: 2025
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author Pradhan, Soumen
Miller, Kirill
Hartmann, Fabian
Spring, Merit
Gabel, Judith
Leikert, Berengar
Kuhn, Silke
Kamp, Martin
Lopez-Richard, Victor
Sing, Michael
Claessen, Ralph
Höfling, Sven
author_facet Pradhan, Soumen
Miller, Kirill
Hartmann, Fabian
Spring, Merit
Gabel, Judith
Leikert, Berengar
Kuhn, Silke
Kamp, Martin
Lopez-Richard, Victor
Sing, Michael
Claessen, Ralph
Höfling, Sven
contents Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor (CMOS)-technology, faces several critical challenges including scaling limitation of devices [1, 2], separation of computation and memory units [3] and most importantly, overall system energy efficiency [4]. While numerous materials with emergent functionalities have been proposed to overcome these limitations, scalability, reproducibility, and compatibility remain critical obstacles [5, 6]. Here, we demonstrate oxide-interface based polymorphic electronic devices with programmable transistor, memristor, and memcapacitor functionalities by manipulating the quasi-two-dimensional electron gas in LaAlO3/SrTiO3 heterostructures [7, 8] using lateral gates. A circuit utilizing two polymorphic functionalities of transistor and memcapacitor exhibits nonlinearity and short-term memory, enabling implementation in physical reservoir computing. An integrated circuit incorporating transistor and memristor functionalities is utilized for the transition from short- to long-term synaptic plasticity and for logic operations, along with in-situ logic output storage. The same circuit with advanced reconfigurable synaptic logic operations presents high-level multi-input decision-making tasks, such as patient-monitoring in healthcare applications. Our findings pave the way for oxide-based monolithic integrated circuits in a scalable, silicon compatible, energy efficient single platform, advancing both the polymorphic and neuromorphic computings.
format Preprint
id arxiv_https___arxiv_org_abs_2508_03515
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Oxide Interface-Based Polymorphic Electronic Devices for Neuromorphic Computing
Pradhan, Soumen
Miller, Kirill
Hartmann, Fabian
Spring, Merit
Gabel, Judith
Leikert, Berengar
Kuhn, Silke
Kamp, Martin
Lopez-Richard, Victor
Sing, Michael
Claessen, Ralph
Höfling, Sven
Disordered Systems and Neural Networks
Materials Science
Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor (CMOS)-technology, faces several critical challenges including scaling limitation of devices [1, 2], separation of computation and memory units [3] and most importantly, overall system energy efficiency [4]. While numerous materials with emergent functionalities have been proposed to overcome these limitations, scalability, reproducibility, and compatibility remain critical obstacles [5, 6]. Here, we demonstrate oxide-interface based polymorphic electronic devices with programmable transistor, memristor, and memcapacitor functionalities by manipulating the quasi-two-dimensional electron gas in LaAlO3/SrTiO3 heterostructures [7, 8] using lateral gates. A circuit utilizing two polymorphic functionalities of transistor and memcapacitor exhibits nonlinearity and short-term memory, enabling implementation in physical reservoir computing. An integrated circuit incorporating transistor and memristor functionalities is utilized for the transition from short- to long-term synaptic plasticity and for logic operations, along with in-situ logic output storage. The same circuit with advanced reconfigurable synaptic logic operations presents high-level multi-input decision-making tasks, such as patient-monitoring in healthcare applications. Our findings pave the way for oxide-based monolithic integrated circuits in a scalable, silicon compatible, energy efficient single platform, advancing both the polymorphic and neuromorphic computings.
title Oxide Interface-Based Polymorphic Electronic Devices for Neuromorphic Computing
topic Disordered Systems and Neural Networks
Materials Science
url https://arxiv.org/abs/2508.03515