Hybrid metal-semiconductor quantum dots in InAs as a platform for quantum simulation
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2025
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866918115771678720 |
|---|---|
| author | Sriram, Praveen Hsueh, Connie L. Morey, Karna A. Wang, Tiantian Thomas, Candice Gardner, Geoffrey C. Kastner, Marc A. Manfra, Michael J. Goldhaber-Gordon, David |
| author_facet | Sriram, Praveen Hsueh, Connie L. Morey, Karna A. Wang, Tiantian Thomas, Candice Gardner, Geoffrey C. Kastner, Marc A. Manfra, Michael J. Goldhaber-Gordon, David |
| contents | Arrays of hybrid metal-semiconductor islands offer a new approach to quantum simulation, with key advantages over arrays of conventional quantum dots. Because the metallic component of these hybrid islands has a quasi-continuous level spectrum, each site in an array can be effectively electronically identical; in contrast, each conventional semiconductor quantum dot has its own spectral fingerprint. Meanwhile, the semiconductor component retains gate-tunability of intersite coupling. This combination creates a scalable platform for simulating correlated ground states driven by Coulomb interactions. We report the fabrication and characterization of hybrid metal-semiconductor islands, featuring a submicron metallic component transparently contacting a gate-confined region of an InAs quantum well with tunable couplings to macroscopic leads. Tuning to the weak-coupling limit forms a single-electron transistor with highly-uniform Coulomb peaks, with no resolvable excitation spectrum in the Coulomb diamonds. Upon increasing the transmissions toward the ballistic regime we observe an evolution to dynamical Coulomb blockade. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_03928 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Hybrid metal-semiconductor quantum dots in InAs as a platform for quantum simulation Sriram, Praveen Hsueh, Connie L. Morey, Karna A. Wang, Tiantian Thomas, Candice Gardner, Geoffrey C. Kastner, Marc A. Manfra, Michael J. Goldhaber-Gordon, David Mesoscale and Nanoscale Physics Arrays of hybrid metal-semiconductor islands offer a new approach to quantum simulation, with key advantages over arrays of conventional quantum dots. Because the metallic component of these hybrid islands has a quasi-continuous level spectrum, each site in an array can be effectively electronically identical; in contrast, each conventional semiconductor quantum dot has its own spectral fingerprint. Meanwhile, the semiconductor component retains gate-tunability of intersite coupling. This combination creates a scalable platform for simulating correlated ground states driven by Coulomb interactions. We report the fabrication and characterization of hybrid metal-semiconductor islands, featuring a submicron metallic component transparently contacting a gate-confined region of an InAs quantum well with tunable couplings to macroscopic leads. Tuning to the weak-coupling limit forms a single-electron transistor with highly-uniform Coulomb peaks, with no resolvable excitation spectrum in the Coulomb diamonds. Upon increasing the transmissions toward the ballistic regime we observe an evolution to dynamical Coulomb blockade. |
| title | Hybrid metal-semiconductor quantum dots in InAs as a platform for quantum simulation |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2508.03928 |