Emerging ultra-wide band gap semiconductors for future high-frequency electronics

Documenti analoghi

• Stability, growth, and doping of In$_{2}$(Si, Ge)$_{2}$O$_{7}$ as promising n-type wide-gap semiconductors
  di: Lee, Cheng-Wei, et al.
  Pubblicazione: (2025)
• NiGa$_{2}$O$_{4}$ interfacial layers in NiO/Ga$_{2}$O$_{3}$ heterojunction diodes at high temperature
  di: Egbo, Kingsley, et al.
  Pubblicazione: (2024)
• Epitaxial growth and semiconductor properties of NiGa2O4 spinel for Ga2O3/NiO interfaces
  di: Egbo, Kingsley, et al.
  Pubblicazione: (2025)
• Ion exchange synthesizes layered polymorphs of MgZrN$_2$ and MgHfN$_2$, two metastable semiconductors
  di: Rom, Christopher L., et al.
  Pubblicazione: (2024)
• A Python code for calculating the mean-value (Baldereschi's) point for any crystal structure
  di: Stevanovic, Vladan
  Pubblicazione: (2024)