Design of high-mobility p-type GaN via the piezomobility tensor
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866909730783363072 |
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| author | Chen, Jie-Cheng Leveillee, Joshua Van de Walle, Chris G. Giustino, Feliciano |
| author_facet | Chen, Jie-Cheng Leveillee, Joshua Van de Walle, Chris G. Giustino, Feliciano |
| contents | Gallium nitride (GaN) is a wide-bandgap semiconductor of significant interest for applications in solid-state lighting, power electronics, and radio-frequency amplifiers. An important limitation of this semiconductor is its low intrinsic hole mobility, which hinders the development of \textit{p}-channel devices and the large-scale integration of GaN CMOS in next-generation electronics. Prior research has explored the use of strain to improve the hole mobility of GaN, but a systematic analysis of all possible strain conditions and their impact on the mobility is lacking. In this study, we introduce a piezomobility tensor notation to characterize the relationship between applied strain and hole mobility in GaN. To map the strain-dependence of the hole mobility, we solve the \textit{ab initio} Boltzmann transport equation, accounting for electron-phonon scattering and GW quasiparticle energy corrections. We show that there exist three optimal strain configurations, two uniaxial strains and one shear strain, that can lead to significant mobility enhancement. In particular, we predict room-temperature hole mobility of up to 164~\mob\ for 2\% uniaxial compression and 148~\mob\ for 2\% shear strain. Our methodology provides a general framework for investigating strain effects on the transport properties of semiconductors from first principles. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_06723 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Design of high-mobility p-type GaN via the piezomobility tensor Chen, Jie-Cheng Leveillee, Joshua Van de Walle, Chris G. Giustino, Feliciano Materials Science Gallium nitride (GaN) is a wide-bandgap semiconductor of significant interest for applications in solid-state lighting, power electronics, and radio-frequency amplifiers. An important limitation of this semiconductor is its low intrinsic hole mobility, which hinders the development of \textit{p}-channel devices and the large-scale integration of GaN CMOS in next-generation electronics. Prior research has explored the use of strain to improve the hole mobility of GaN, but a systematic analysis of all possible strain conditions and their impact on the mobility is lacking. In this study, we introduce a piezomobility tensor notation to characterize the relationship between applied strain and hole mobility in GaN. To map the strain-dependence of the hole mobility, we solve the \textit{ab initio} Boltzmann transport equation, accounting for electron-phonon scattering and GW quasiparticle energy corrections. We show that there exist three optimal strain configurations, two uniaxial strains and one shear strain, that can lead to significant mobility enhancement. In particular, we predict room-temperature hole mobility of up to 164~\mob\ for 2\% uniaxial compression and 148~\mob\ for 2\% shear strain. Our methodology provides a general framework for investigating strain effects on the transport properties of semiconductors from first principles. |
| title | Design of high-mobility p-type GaN via the piezomobility tensor |
| topic | Materials Science |
| url | https://arxiv.org/abs/2508.06723 |