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| Main Authors: | , |
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| Format: | Preprint |
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2025
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| Online Access: | https://arxiv.org/abs/2508.06782 |
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| _version_ | 1866911100377759744 |
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| author | Kilin, Mustafa Yasar, Firat |
| author_facet | Kilin, Mustafa Yasar, Firat |
| contents | This work presents a novel Gallium nitride (GaN) high-electron-mobility transistor (HEMT) based ultraviolet photodetector architecture integrating advanced material and structural design strategies to enhance detection performance and stability under room-temperature operation. The device is constructed on a high-thermal-conductivity silicon carbide (SiC) substrate and incorporates an n-GaN buffer, an indium nitride (InN) channel layer for improved electron mobility and two-dimensional electron gas (2DEG) confinement, and a dual-passivation scheme combining silicon nitride (SiN) and hexagonal boron nitride (h-BN). A p-GaN layer is embedded between the passivation interfaces to deplete the 2DEG in dark conditions. Lateral nickel (Ni) source and drain electrodes and a recessed gate positioned within the substrate ensure enhanced electric field control and noise suppression. Numerical simulations demonstrate that the integration of a hexagonal boron nitride (h-BN) interlayer within the dual passivation stack effectively suppresses the gate leakage current from typical literature values of the order of $10^{-7}$~A to approximately $10^{-10}$~A, highlighting its critical role in enhancing interfacial insulation. In addition, consistent with previous reports, the use of a silicon carbide (SiC) substrate offers significantly improved thermal management over sapphire, enabling more stable operation under UV illumination. The device demonstrates strong photoresponse under 360~nm ultraviolet (UV) illumination, high photo-to-dark current ratios (PDCR) of approximately $10^{6}$, and tunable performance via structural optimization of p-GaN width between 0.40~$μ$m and 1.60~$μ$m, doping concentration from $5 \times 10^{16}$~cm$^{-3}$ to $5 \times 10^{18}$~cm$^{-3}$, and embedding depth between 0.060~$μ$m and 0.068~$μ$m. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_06782 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | GaN/InN HEMT based UV photodetector on SiC with hexagonal boron nitride passivation Kilin, Mustafa Yasar, Firat Optics This work presents a novel Gallium nitride (GaN) high-electron-mobility transistor (HEMT) based ultraviolet photodetector architecture integrating advanced material and structural design strategies to enhance detection performance and stability under room-temperature operation. The device is constructed on a high-thermal-conductivity silicon carbide (SiC) substrate and incorporates an n-GaN buffer, an indium nitride (InN) channel layer for improved electron mobility and two-dimensional electron gas (2DEG) confinement, and a dual-passivation scheme combining silicon nitride (SiN) and hexagonal boron nitride (h-BN). A p-GaN layer is embedded between the passivation interfaces to deplete the 2DEG in dark conditions. Lateral nickel (Ni) source and drain electrodes and a recessed gate positioned within the substrate ensure enhanced electric field control and noise suppression. Numerical simulations demonstrate that the integration of a hexagonal boron nitride (h-BN) interlayer within the dual passivation stack effectively suppresses the gate leakage current from typical literature values of the order of $10^{-7}$~A to approximately $10^{-10}$~A, highlighting its critical role in enhancing interfacial insulation. In addition, consistent with previous reports, the use of a silicon carbide (SiC) substrate offers significantly improved thermal management over sapphire, enabling more stable operation under UV illumination. The device demonstrates strong photoresponse under 360~nm ultraviolet (UV) illumination, high photo-to-dark current ratios (PDCR) of approximately $10^{6}$, and tunable performance via structural optimization of p-GaN width between 0.40~$μ$m and 1.60~$μ$m, doping concentration from $5 \times 10^{16}$~cm$^{-3}$ to $5 \times 10^{18}$~cm$^{-3}$, and embedding depth between 0.060~$μ$m and 0.068~$μ$m. |
| title | GaN/InN HEMT based UV photodetector on SiC with hexagonal boron nitride passivation |
| topic | Optics |
| url | https://arxiv.org/abs/2508.06782 |