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Main Authors: Huang, Xiaochun, Zhao, Lingxiao, Xiong, Rui, Li, Wenbin, Wang, Bao-tian, Sa, Baisheng, Bode, Matthias
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2508.07351
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author Huang, Xiaochun
Zhao, Lingxiao
Xiong, Rui
Li, Wenbin
Wang, Bao-tian
Sa, Baisheng
Bode, Matthias
author_facet Huang, Xiaochun
Zhao, Lingxiao
Xiong, Rui
Li, Wenbin
Wang, Bao-tian
Sa, Baisheng
Bode, Matthias
contents The free-standing monolayer Si$_2$Te$_2$ (ML-Si$_2$Te$_2$) has been theoretically predicted to host a room-temperature quantum spin Hall phase. However, its experimental realization remains challenge due to the absence of a three-dimensional counterpart. Here, we demonstrate that HfTe$_2$ serves as an ideal substrate for the epitaxial growth of ML-Si$_2$Te$_2$, preserving its topological phase. Scanning tunneling microscopy and spectroscopy confirm a strain-free ${(1 \times 1)}$ lattice of ML-Si$_2$Te$_2$, along with a sizable band gap, which is well captured by first-principles calculations. Moreover, distinct edge states, independent of step geometry and exhibiting a broad spatial distribution, are observed at ML-Si$_2$Te$_2$ step edges, underscoring its topological nature.
format Preprint
id arxiv_https___arxiv_org_abs_2508_07351
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Experimental Realization of the Topologically Nontrivial Phase in Monolayer Si$_2$Te$_2$
Huang, Xiaochun
Zhao, Lingxiao
Xiong, Rui
Li, Wenbin
Wang, Bao-tian
Sa, Baisheng
Bode, Matthias
Materials Science
The free-standing monolayer Si$_2$Te$_2$ (ML-Si$_2$Te$_2$) has been theoretically predicted to host a room-temperature quantum spin Hall phase. However, its experimental realization remains challenge due to the absence of a three-dimensional counterpart. Here, we demonstrate that HfTe$_2$ serves as an ideal substrate for the epitaxial growth of ML-Si$_2$Te$_2$, preserving its topological phase. Scanning tunneling microscopy and spectroscopy confirm a strain-free ${(1 \times 1)}$ lattice of ML-Si$_2$Te$_2$, along with a sizable band gap, which is well captured by first-principles calculations. Moreover, distinct edge states, independent of step geometry and exhibiting a broad spatial distribution, are observed at ML-Si$_2$Te$_2$ step edges, underscoring its topological nature.
title Experimental Realization of the Topologically Nontrivial Phase in Monolayer Si$_2$Te$_2$
topic Materials Science
url https://arxiv.org/abs/2508.07351