Gradient Electronic Landscapes in van der Waals Heterostructures

Fuente: arXiv
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Autori principali: Lassaline, Nolan, Sørensen, Camilla H., Meucci, Giulia, Linde, Sander J., Yaghin, Kian Latifi, Chau, Tuan K., Carrad, Damon J., Bøggild, Peter, Jespersen, Thomas S., Booth, Timothy J.
Natura: Preprint
Pubblicazione: 2025
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author Lassaline, Nolan
Sørensen, Camilla H.
Meucci, Giulia
Linde, Sander J.
Yaghin, Kian Latifi
Chau, Tuan K.
Carrad, Damon J.
Bøggild, Peter
Jespersen, Thomas S.
Booth, Timothy J.
author_facet Lassaline, Nolan
Sørensen, Camilla H.
Meucci, Giulia
Linde, Sander J.
Yaghin, Kian Latifi
Chau, Tuan K.
Carrad, Damon J.
Bøggild, Peter
Jespersen, Thomas S.
Booth, Timothy J.
contents Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) provide a versatile platform for quantum electronics. Experiments generally require encapsulating graphene within hBN flakes, forming a protective van der Waals (vdW) heterostructure that preserves delicate properties of the embedded crystal. To produce functional devices, heterostructures are typically shaped by electron beam lithography and etching, which has driven progress in 2D materials research. However, patterns are primarily restricted to in-plane geometries such as boxes, holes, and stripes, limiting opportunities for advanced architectures. Here, we use thermal scanning-probe lithography (tSPL) to produce smooth topographic landscapes in vdW heterostructures, controlling the thickness degree of freedom with nanometer precision. We electrically gate a sinusoidal topography to impose an electric-field gradient on the graphene layer to spatially modulate charge-carrier doping. We observe signatures of the landscape in transport measurements-resistance-peak spreading and commensurability oscillations-establishing tSPL for tailoring high-quality quantum electronics.
format Preprint
id arxiv_https___arxiv_org_abs_2508_07896
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Gradient Electronic Landscapes in van der Waals Heterostructures
Lassaline, Nolan
Sørensen, Camilla H.
Meucci, Giulia
Linde, Sander J.
Yaghin, Kian Latifi
Chau, Tuan K.
Carrad, Damon J.
Bøggild, Peter
Jespersen, Thomas S.
Booth, Timothy J.
Mesoscale and Nanoscale Physics
Materials Science
Applied Physics
Quantum Physics
Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) provide a versatile platform for quantum electronics. Experiments generally require encapsulating graphene within hBN flakes, forming a protective van der Waals (vdW) heterostructure that preserves delicate properties of the embedded crystal. To produce functional devices, heterostructures are typically shaped by electron beam lithography and etching, which has driven progress in 2D materials research. However, patterns are primarily restricted to in-plane geometries such as boxes, holes, and stripes, limiting opportunities for advanced architectures. Here, we use thermal scanning-probe lithography (tSPL) to produce smooth topographic landscapes in vdW heterostructures, controlling the thickness degree of freedom with nanometer precision. We electrically gate a sinusoidal topography to impose an electric-field gradient on the graphene layer to spatially modulate charge-carrier doping. We observe signatures of the landscape in transport measurements-resistance-peak spreading and commensurability oscillations-establishing tSPL for tailoring high-quality quantum electronics.
title Gradient Electronic Landscapes in van der Waals Heterostructures
topic Mesoscale and Nanoscale Physics
Materials Science
Applied Physics
Quantum Physics
url https://arxiv.org/abs/2508.07896