Lifshitz transition in correlated topological semimetals
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arXiv
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| Auteurs principaux: | , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866911102338596864 |
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| author | Kang, Byungkyun Kim, Myoung-Hwan Park, Chul Hong Janotti, Anderson Kim, Eunja |
| author_facet | Kang, Byungkyun Kim, Myoung-Hwan Park, Chul Hong Janotti, Anderson Kim, Eunja |
| contents | Topological quasiparticles, arising when the chemical potential is near the band crossing, are pivotal for the development of next-generation quantum devices. They are expected to exist in half-Heusler correlated topological semimetals. However, the emergence of hole carriers, which alter the chemical potential away from the quadratic-band-touching points is not yet understood. Here, we investigated the electronic structure of YPtBi and GdPtBi through ab initio many-body perturbation GW theory combined with dynamical mean-field theory and revealed that the correlation effects of 4$d$ or 4$f$ electrons can lead to the formation of hole carriers. In YPtBi, the weakly correlated Y-4$d$ electrons constitute the topological bands, and the quadratic-band-touching point is at the Fermi level at high temperatures. At low temperatures, enhanced correlations of Y-4$d$ renormalize the topological bands, leading to the formation of hole pocket. In GdPtBi, the strongly correlated Gd-4$f$ electrons form the Hubbard-like bands originate from self-energy effects associated with a topological singularity. These local bands encompass itinerant 4$f$ bands, which hybridize with topological bands to induce pronounced hole bands. This concerted effect reduces the hole doping, bringing the chemical potential closer to the quadratic-band-touching points as the temperature is lowered. The temperature-induced Lifshitz transition should be responsible for the large hole bands observed in both topological semimetals in angle-resolved photoemission spectroscopy measurements at low temperatures. Our findings indicate that the integration of correlated fermions within a topological framework can modulate the energy landscape of topological bands. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_08598 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Lifshitz transition in correlated topological semimetals Kang, Byungkyun Kim, Myoung-Hwan Park, Chul Hong Janotti, Anderson Kim, Eunja Strongly Correlated Electrons Topological quasiparticles, arising when the chemical potential is near the band crossing, are pivotal for the development of next-generation quantum devices. They are expected to exist in half-Heusler correlated topological semimetals. However, the emergence of hole carriers, which alter the chemical potential away from the quadratic-band-touching points is not yet understood. Here, we investigated the electronic structure of YPtBi and GdPtBi through ab initio many-body perturbation GW theory combined with dynamical mean-field theory and revealed that the correlation effects of 4$d$ or 4$f$ electrons can lead to the formation of hole carriers. In YPtBi, the weakly correlated Y-4$d$ electrons constitute the topological bands, and the quadratic-band-touching point is at the Fermi level at high temperatures. At low temperatures, enhanced correlations of Y-4$d$ renormalize the topological bands, leading to the formation of hole pocket. In GdPtBi, the strongly correlated Gd-4$f$ electrons form the Hubbard-like bands originate from self-energy effects associated with a topological singularity. These local bands encompass itinerant 4$f$ bands, which hybridize with topological bands to induce pronounced hole bands. This concerted effect reduces the hole doping, bringing the chemical potential closer to the quadratic-band-touching points as the temperature is lowered. The temperature-induced Lifshitz transition should be responsible for the large hole bands observed in both topological semimetals in angle-resolved photoemission spectroscopy measurements at low temperatures. Our findings indicate that the integration of correlated fermions within a topological framework can modulate the energy landscape of topological bands. |
| title | Lifshitz transition in correlated topological semimetals |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2508.08598 |