Thermoelectric Properties of Copper-based Chalcopyrite Semiconductors Cu$MX_2$ ($M$ = Al, Ga, and In; $X$ = S, Se, and Te) from First-Principles Calculations
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| Format: | Preprint |
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2025
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| _version_ | 1866913986455273472 |
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| author | Xiong, Wu Xia, Zhonghao Han, Zhongjuan Yao, Dong He, Jiangang |
| author_facet | Xiong, Wu Xia, Zhonghao Han, Zhongjuan Yao, Dong He, Jiangang |
| contents | Copper-based chalcopyrite semiconductors have attracted sustained interest owing to their promising thermoelectric (TE) performance, yet the microscopic origins of their TE behavior remain incompletely understood. Here, we systematically investigate the TE properties of Cu$MX_2$ ($M=$ Al, Ga, and In; $X=$ S, Se, and Te) using first-principles calculations. For $p$-type doping, the calculated electrical conductivities ($σ$), hole mobilities ($μ$), Seebeck coefficients ($S$), and power factors (PFs) of CuGaTe$_2$ and CuInTe$_2$ show excellent agreement with experimental data. At fixed temperature and hole concentration, as $X$ varies from S to Te, the hole mobility increases markedly due to progressively weaker polar--optical--phonon scattering, reflecting the reduced ionic contribution to the dielectric response in compounds with heavier chalcogens. Combined with smaller transport effective masses, Cu$M$Te$_2$ compounds therefore exhibit high $σ$ and large PFs. Across the Cu$MX_2$ family, the anomalously lower $κ_{\mathrm{L}}$ of Cu$M$Se$_2$ relative to Cu$M$Te$_2$ arises primarily from enhanced three-phonon scattering at low-frequency region. For a given $M$, Cu$M$S$_2$ displays the steepest temperature-induced decrease in $κ_{\mathrm{L}}$ and attains a smaller $κ_{\mathrm{L}}$ than Cu$M$Se$_2$ and Cu$M$Te$_2$ at 800~K. Given the low band degeneracy and comparatively modest hole mobilities of Cu$MX_2$ compounds, the most effective routes to further improve their TE performance are to enhance $σ$ and reduce $κ_{\mathrm{L}}$ through doping. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2508_08988 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Thermoelectric Properties of Copper-based Chalcopyrite Semiconductors Cu$MX_2$ ($M$ = Al, Ga, and In; $X$ = S, Se, and Te) from First-Principles Calculations Xiong, Wu Xia, Zhonghao Han, Zhongjuan Yao, Dong He, Jiangang Materials Science Copper-based chalcopyrite semiconductors have attracted sustained interest owing to their promising thermoelectric (TE) performance, yet the microscopic origins of their TE behavior remain incompletely understood. Here, we systematically investigate the TE properties of Cu$MX_2$ ($M=$ Al, Ga, and In; $X=$ S, Se, and Te) using first-principles calculations. For $p$-type doping, the calculated electrical conductivities ($σ$), hole mobilities ($μ$), Seebeck coefficients ($S$), and power factors (PFs) of CuGaTe$_2$ and CuInTe$_2$ show excellent agreement with experimental data. At fixed temperature and hole concentration, as $X$ varies from S to Te, the hole mobility increases markedly due to progressively weaker polar--optical--phonon scattering, reflecting the reduced ionic contribution to the dielectric response in compounds with heavier chalcogens. Combined with smaller transport effective masses, Cu$M$Te$_2$ compounds therefore exhibit high $σ$ and large PFs. Across the Cu$MX_2$ family, the anomalously lower $κ_{\mathrm{L}}$ of Cu$M$Se$_2$ relative to Cu$M$Te$_2$ arises primarily from enhanced three-phonon scattering at low-frequency region. For a given $M$, Cu$M$S$_2$ displays the steepest temperature-induced decrease in $κ_{\mathrm{L}}$ and attains a smaller $κ_{\mathrm{L}}$ than Cu$M$Se$_2$ and Cu$M$Te$_2$ at 800~K. Given the low band degeneracy and comparatively modest hole mobilities of Cu$MX_2$ compounds, the most effective routes to further improve their TE performance are to enhance $σ$ and reduce $κ_{\mathrm{L}}$ through doping. |
| title | Thermoelectric Properties of Copper-based Chalcopyrite Semiconductors Cu$MX_2$ ($M$ = Al, Ga, and In; $X$ = S, Se, and Te) from First-Principles Calculations |
| topic | Materials Science |
| url | https://arxiv.org/abs/2508.08988 |