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Electrostatic gate-controlled quantum interference in a high-mobility two-dimensional electron gas at the (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_3$/SrTiO$_3$ interface

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Rubi, Km, Han, Kun, Zhen, Huang, Goiran, Michel, Maude, Duncan K., Escoffier, Walter, Ariando, A.
Format:	Preprint
Publié:	2025
Sujets:	Mesoscale and Nanoscale Physics Materials Science
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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