Copertina

Switching of a closed mobile vacancy based memristor, whose specific resistance linearly depends on local vacancy concentration

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Boylo, Irina V., Metlov, Konstantin L.
Natura:	Preprint
Pubblicazione:	2025
Soggetti:	Mesoscale and Nanoscale Physics
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi

Magnetostatic bounds on stability of hopfions in bulk helimagnets
di: Metlov, Konstantin L.
Pubblicazione: (2024)

Small-angle neutron scattering signatures of magnetic hopfions
di: Metlov, Konstantin L., et al.
Pubblicazione: (2024)

Elliptical stability of hopfions in bulk helimagnets
di: Metlov, Konstantin L.
Pubblicazione: (2025)

Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration
di: Martir, Rodrigo Leal, et al.
Pubblicazione: (2022)

Magnetic small-angle neutron scattering by a nanocrystalline ferromagnet with anisotropic exchange interaction
di: Metlov, Konstantin L., et al.
Pubblicazione: (2026)

Minimizing sensor-sample distances in scanning nitrogen-vacancy magnetometry
di: Xu, Zhewen, et al.
Pubblicazione: (2025)

Defect engineering and effect of vacancy concentration on the electrochemical performance of V-based MXenes
di: Qin, Leiqiang, et al.
Pubblicazione: (2025)

Three-dimensional magnetization textures as quaternionic functions
di: Metlov, Konstantin L., et al.
Pubblicazione: (2025)

Do the magnetic hopfions have tails?
di: Metlov, Konstantin L., et al.
Pubblicazione: (2026)

Designing atomic-scale resistive circuits in topological insulators through vacancy-induced localized modes
di: Jiang, Cunyuan, et al.
Pubblicazione: (2025)

Effects of random vacancies on the spin-dependent thermoelectric properties of silicene nanoribbon
di: Zambrano, D., et al.
Pubblicazione: (2026)

Temperature dependent spin-phonon coupling of boron-vacancy centers in hexagonal boron nitride
di: Liu, Zhongyuan, et al.
Pubblicazione: (2024)

Impact of vacancies on twisted bilayer graphene quantum point contacts
di: Moles, Pablo, et al.
Pubblicazione: (2023)

Spin-defect characteristics of single sulfur vacancies in monolayer $\text{MoS}_2$
di: Hötger, Alexander, et al.
Pubblicazione: (2022)

Directional entanglement of spin-orbit locked nitrogen-vacancy centers by magnons
di: Xue, Zhiping, et al.
Pubblicazione: (2025)

Coherent all-optical control of the germanium vacancy in diamond
di: Adambukulam, C., et al.
Pubblicazione: (2024)

Scalable parallel measurement of individual nitrogen-vacancy centers
di: Cambria, Matthew, et al.
Pubblicazione: (2024)

Systematic investigation of dynamic nuclear polarization with boron vacancy in hexagonal boron nitride
di: Nakamura, Yuki, et al.
Pubblicazione: (2025)

Synaptic plasticity in Co/Nb:STO memristive devices: The role of oxygen vacancies
di: Quiñonez, Walter, et al.
Pubblicazione: (2025)

Electronic and magnetic properties of single chalcogen vacancies in MoS$_2$/Au(111)
di: Trishin, Sergey, et al.
Pubblicazione: (2023)

Photoionization current spectroscopy of individual silicon vacancies in silicon carbide
di: Okajima, Kazuki, et al.
Pubblicazione: (2025)

Quantifying the creation of negatively charged boron vacancies in He-ion irradiated hexagonal boron nitride
di: Carbone, Amedeo, et al.
Pubblicazione: (2025)

Robust quantification of the diamond nitrogen-vacancy center charge state via photoluminescence spectroscopy
di: Thalassinos, Giannis, et al.
Pubblicazione: (2025)

Energy level structure of diamond silicon vacancy centers in an off-axis magnetic field
di: Wu, Shuhao, et al.
Pubblicazione: (2024)

Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride with broadband microwave pulses
di: Nakamura, Yuki, et al.
Pubblicazione: (2026)

Ab initio study of strain-driven vacancy clustering in aluminum
di: Bhowmik, Sayan, et al.
Pubblicazione: (2025)

Overcoming temperature limitations in laser cooling using dressed states and diamond vacancies
di: Eastham, Paul R., et al.
Pubblicazione: (2025)

Multi-shot readout error benchmark of the nitrogen-vacancy center's electronic qubit
di: Boross, Péter, et al.
Pubblicazione: (2025)

Near-zero-field microwave-free magnetometry with nitrogen-vacancy centers in nanodiamonds
di: Dhungel, Omkar, et al.
Pubblicazione: (2024)

Strong unidirectional Rashba state induced by extended vacancy line defects in a $1T'$-WTe$_{2}$ monolayer
di: Absor, Moh. Adhib Ulil, et al.
Pubblicazione: (2023)

The properties of the nitrogen-vacancy center in milled chemical vapor deposition nanodiamonds
di: Mameli, Alessandro, et al.
Pubblicazione: (2025)

Near zero-field microwave-free magnetometry with ensembles of nitrogen-vacancy centers in diamond
di: Dhungel, Omkar, et al.
Pubblicazione: (2023)

Energy efficient coherent quantum control of nitrogen vacancy (NV) spin with nanoscale magnets
di: Chowdhury, Md Fahim F, et al.
Pubblicazione: (2024)

Current-induced brightening of vacancy-related emitters in hexagonal boron nitride
di: Steiner, Corinne, et al.
Pubblicazione: (2024)

Electron-beam-induced adatom-vacancy-complexes in mono- and bilayer phosphorene
di: Speckmann, Carsten, et al.
Pubblicazione: (2024)

Temperature anomaly of the V$_Si$ and V$_C$ vacancy spin coherence time in 4H-SiC
di: Chrostoski, P., et al.
Pubblicazione: (2025)

Oxygen vacancies kinetics in $TaO_{2-h}$/$Ta_{2}$$O_{5-x}$ memristive interfaces
di: Ferreyra, C., et al.
Pubblicazione: (2024)

Can we build a transistor using vacancy-induced bound states in a topological insulator
di: Jiang, Cunyuan
Pubblicazione: (2025)

Coherent population trapping and spin relaxation of a silicon vacancy center in diamond at mK temperatures
di: Wu, Shuhao, et al.
Pubblicazione: (2024)

Identifying optimal magnetic field configurations for decoherence mitigation of boron vacancies in hexagonal boron nitride
di: Mistri, Basanta, et al.
Pubblicazione: (2025)