Mid-infrared LEDs based on lattice-mismatched hybrid IV-VI/III-V heterojunctions
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arXiv
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| Main Authors: | , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866910024190656512 |
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| author | Meyer, Jarod E. Rodriguez, Biridiana Nordin, Leland Mukherjee, Kunal |
| author_facet | Meyer, Jarod E. Rodriguez, Biridiana Nordin, Leland Mukherjee, Kunal |
| contents | Light-emitting diodes (LEDs) can bridge the gap between narrow linewidth, expensive lasers and broadband, inefficient thermal globars for low-cost chemical sensing in the mid-infrared (mid-IR). However, the efficiency of III-V based mid-IR LEDs at room temperature is low, primarily limited by strong nonradiative Auger-Meitner recombination that is only partially overcome with complex quantum-engineered active regions. Here, we exploit the intrinsically low Auger Meitner recombination rates of the IV-VI semiconductors PbSe and PbSnSe, while leveraging the mature III-V platform through the fabrication of hybrid heterojunctions that mediate the ~8% lattice mismatch to GaAs. Electrically injected n-PbSe/p-GaAs LEDs emit at 3.8 um with output powers up to 400 uW under pulsed operation and a peak wall plug efficiency of 0.08% at room temperature, approaching the performance of commercial III-V LEDs at similar wavelengths. Incorporating 7% Sn extends the emission to 5 um in GeSe/PbSnSe/GaAs LEDs with output powers up to 45 uW. Notably, both devices operate despite threading dislocation densities on the order of 1e9/cm^2, underscoring the potential of hybrid IV-VI/III-V heterojunction architectures. We show that combining the complementary advantages of IV-VI and III-V semiconductors offers a simple and efficient mid IR optoelectronic platform for a rapidly expanding set of applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_09703 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Mid-infrared LEDs based on lattice-mismatched hybrid IV-VI/III-V heterojunctions Meyer, Jarod E. Rodriguez, Biridiana Nordin, Leland Mukherjee, Kunal Materials Science Light-emitting diodes (LEDs) can bridge the gap between narrow linewidth, expensive lasers and broadband, inefficient thermal globars for low-cost chemical sensing in the mid-infrared (mid-IR). However, the efficiency of III-V based mid-IR LEDs at room temperature is low, primarily limited by strong nonradiative Auger-Meitner recombination that is only partially overcome with complex quantum-engineered active regions. Here, we exploit the intrinsically low Auger Meitner recombination rates of the IV-VI semiconductors PbSe and PbSnSe, while leveraging the mature III-V platform through the fabrication of hybrid heterojunctions that mediate the ~8% lattice mismatch to GaAs. Electrically injected n-PbSe/p-GaAs LEDs emit at 3.8 um with output powers up to 400 uW under pulsed operation and a peak wall plug efficiency of 0.08% at room temperature, approaching the performance of commercial III-V LEDs at similar wavelengths. Incorporating 7% Sn extends the emission to 5 um in GeSe/PbSnSe/GaAs LEDs with output powers up to 45 uW. Notably, both devices operate despite threading dislocation densities on the order of 1e9/cm^2, underscoring the potential of hybrid IV-VI/III-V heterojunction architectures. We show that combining the complementary advantages of IV-VI and III-V semiconductors offers a simple and efficient mid IR optoelectronic platform for a rapidly expanding set of applications. |
| title | Mid-infrared LEDs based on lattice-mismatched hybrid IV-VI/III-V heterojunctions |
| topic | Materials Science |
| url | https://arxiv.org/abs/2508.09703 |