Phonon anomalies, Anharmonicity, and thermal expansion coefficient in few layered PtX2 (X= S, Se): A temperature dependent Raman study
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| Format: | Preprint |
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2025
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| _version_ | 1866912537536102400 |
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| author | Chakkar, Atul G. Auti, Chaitanya B. Bassi, Gaurav Kumar, Mukesh Kumar, Pradeep |
| author_facet | Chakkar, Atul G. Auti, Chaitanya B. Bassi, Gaurav Kumar, Mukesh Kumar, Pradeep |
| contents | Two-dimensional group-10 noble transition metal dichalcogenides have garnered growing attention due to their rich physical properties and promising applications across nanoelectronics, optoelectronics, and spintronics. Among them, PtX2 (X = S, Se) exhibits pronounced interlayer coupling driven by hybridization of the out-of-plane Pz orbitals of the chalcogen atoms. In this work, we present a detailed temperature and polarization-resolved Raman spectroscopic study of few-layer PtS2 and PtSe2 over the temperature range of ~ 5 to 300 K. Our study encompasses phonon-phonon interactions, symmetry analysis of phonon modes, low-frequency interlayer vibrations, and extraction of thermal expansion coefficients. Notable phonon anomalies in peak position, linewidth, and intensity emerge around ~ 80 K and 150 K for PtS2, and ~ 70 K and 240 K for PtSe2, indicating intricate coupling between thermal and vibrational dynamics. These results offer valuable insights for the development of devices based on PtS2, PtSe2, and related 2D materials, where interlayer interactions, anharmonic effects, and thermal expansion behaviour play crucial roles. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2508_10591 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Phonon anomalies, Anharmonicity, and thermal expansion coefficient in few layered PtX2 (X= S, Se): A temperature dependent Raman study Chakkar, Atul G. Auti, Chaitanya B. Bassi, Gaurav Kumar, Mukesh Kumar, Pradeep Materials Science Other Condensed Matter Two-dimensional group-10 noble transition metal dichalcogenides have garnered growing attention due to their rich physical properties and promising applications across nanoelectronics, optoelectronics, and spintronics. Among them, PtX2 (X = S, Se) exhibits pronounced interlayer coupling driven by hybridization of the out-of-plane Pz orbitals of the chalcogen atoms. In this work, we present a detailed temperature and polarization-resolved Raman spectroscopic study of few-layer PtS2 and PtSe2 over the temperature range of ~ 5 to 300 K. Our study encompasses phonon-phonon interactions, symmetry analysis of phonon modes, low-frequency interlayer vibrations, and extraction of thermal expansion coefficients. Notable phonon anomalies in peak position, linewidth, and intensity emerge around ~ 80 K and 150 K for PtS2, and ~ 70 K and 240 K for PtSe2, indicating intricate coupling between thermal and vibrational dynamics. These results offer valuable insights for the development of devices based on PtS2, PtSe2, and related 2D materials, where interlayer interactions, anharmonic effects, and thermal expansion behaviour play crucial roles. |
| title | Phonon anomalies, Anharmonicity, and thermal expansion coefficient in few layered PtX2 (X= S, Se): A temperature dependent Raman study |
| topic | Materials Science Other Condensed Matter |
| url | https://arxiv.org/abs/2508.10591 |