Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2508.11321 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866908490969120768 |
|---|---|
| author | Wen, Chenyue Xiong, Danrong Yang, Chengyi Zhu, Dapeng Zhao, Weisheng |
| author_facet | Wen, Chenyue Xiong, Danrong Yang, Chengyi Zhu, Dapeng Zhao, Weisheng |
| contents | This study examines the anomalous Hall effect (AHE) in the Heusler series \ce{Mn3Z} (Z=Ga, Ge, Sn), with a particular emphasis on the manipulation of non-collinear antiferromagnetic structures to enhance AHE. By employing density-functional theory and first-principles calculations, we demonstrate that the anomalous Hall conductivity is markedly responsive to electron filling. By strategically doping Ga into \ce{Mn3Sn} and \ce{Mn3Ge} in order to modulate the electron density, a significant increase in anomalous Hall conductivity (AHC) is achieved. It is noteworthy that a Ga:Sn ratio of 1:5 yields peak AHC values exceeding $\mathrm{700(Ω\cdot cm)^{-1}}$, while 3:7 Ga-Ge ratios can result in AHC values surpassing $600\mathrm{(Ω\cdot cm)^{-1}}$. A comparison between the virtual crystal approximation and supercell construction methods for doping has revealed consistent trends. The results of this study pave the way for optimizing AHE in non-collinear AFM materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_11321 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Enhanced anomalous Hall conductivity via Ga doping in Mn\textsubscript{3}Sn and Mn\textsubscript{3}Ge Wen, Chenyue Xiong, Danrong Yang, Chengyi Zhu, Dapeng Zhao, Weisheng Materials Science This study examines the anomalous Hall effect (AHE) in the Heusler series \ce{Mn3Z} (Z=Ga, Ge, Sn), with a particular emphasis on the manipulation of non-collinear antiferromagnetic structures to enhance AHE. By employing density-functional theory and first-principles calculations, we demonstrate that the anomalous Hall conductivity is markedly responsive to electron filling. By strategically doping Ga into \ce{Mn3Sn} and \ce{Mn3Ge} in order to modulate the electron density, a significant increase in anomalous Hall conductivity (AHC) is achieved. It is noteworthy that a Ga:Sn ratio of 1:5 yields peak AHC values exceeding $\mathrm{700(Ω\cdot cm)^{-1}}$, while 3:7 Ga-Ge ratios can result in AHC values surpassing $600\mathrm{(Ω\cdot cm)^{-1}}$. A comparison between the virtual crystal approximation and supercell construction methods for doping has revealed consistent trends. The results of this study pave the way for optimizing AHE in non-collinear AFM materials. |
| title | Enhanced anomalous Hall conductivity via Ga doping in Mn\textsubscript{3}Sn and Mn\textsubscript{3}Ge |
| topic | Materials Science |
| url | https://arxiv.org/abs/2508.11321 |