Low barrier ZrO$_x$-based Josephson junctions

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Choi, Jaehong, Olszewski, Maciej, Zhang, Luojia, Baraissov, Zhaslan, Banerjee, Tathagata, Aggarwal, Kushagra, Chaudhari, Sarvesh, Arias, Tomás A., Muller, David A., Fatemi, Valla, Fuchs, Gregory D.
Format: Preprint
Published: 2025
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866912694973497344
author Choi, Jaehong
Olszewski, Maciej
Zhang, Luojia
Baraissov, Zhaslan
Banerjee, Tathagata
Aggarwal, Kushagra
Chaudhari, Sarvesh
Arias, Tomás A.
Muller, David A.
Fatemi, Valla
Fuchs, Gregory D.
author_facet Choi, Jaehong
Olszewski, Maciej
Zhang, Luojia
Baraissov, Zhaslan
Banerjee, Tathagata
Aggarwal, Kushagra
Chaudhari, Sarvesh
Arias, Tomás A.
Muller, David A.
Fatemi, Valla
Fuchs, Gregory D.
contents The Josephson junction is a crucial element in superconducting devices, and niobium is a promising candidate for the superconducting material due to its large energy gap relative to aluminum. AlO$_x$ has long been regarded as the highest quality oxide tunnel barrier and is often used in niobium-based junctions. Here we propose ZrO$_x$ as an alternative tunnel barrier material for Nb electrodes. We theoretically estimate that zirconium oxide has excellent oxygen retention properties and experimentally verify that there is no significant oxygen diffusion leading to NbO$_x$ formation in the adjacent Nb electrode. We develop a top-down, subtractive fabrication process for Nb/Zr-ZrO$_x$/Nb Josephson junctions, which enables scalability and large-scale production of superconducting electronics. Using cross sectional scanning transmission electron microscopy, we experimentally find that depending on the Zr thickness, ZrO$_x$ tunnel barriers can be fully crystalline with chemically abrupt interfaces with niobium. Further analysis using electron energy loss spectroscopy reveals that ZrO$_x$ corresponds to tetragonal ZrO$_2$. Room temperature characterization of fabricated junctions using Simmons' model shows that ZrO$_2$ exhibits a low tunnel barrier height, which is promising in merged-element transmon applications. Low temperature transport measurements reveal sub-gap structure, while the low-voltage sub-gap resistance remains in the megaohm range.
format Preprint
id arxiv_https___arxiv_org_abs_2508_11593
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Low barrier ZrO$_x$-based Josephson junctions
Choi, Jaehong
Olszewski, Maciej
Zhang, Luojia
Baraissov, Zhaslan
Banerjee, Tathagata
Aggarwal, Kushagra
Chaudhari, Sarvesh
Arias, Tomás A.
Muller, David A.
Fatemi, Valla
Fuchs, Gregory D.
Superconductivity
Materials Science
The Josephson junction is a crucial element in superconducting devices, and niobium is a promising candidate for the superconducting material due to its large energy gap relative to aluminum. AlO$_x$ has long been regarded as the highest quality oxide tunnel barrier and is often used in niobium-based junctions. Here we propose ZrO$_x$ as an alternative tunnel barrier material for Nb electrodes. We theoretically estimate that zirconium oxide has excellent oxygen retention properties and experimentally verify that there is no significant oxygen diffusion leading to NbO$_x$ formation in the adjacent Nb electrode. We develop a top-down, subtractive fabrication process for Nb/Zr-ZrO$_x$/Nb Josephson junctions, which enables scalability and large-scale production of superconducting electronics. Using cross sectional scanning transmission electron microscopy, we experimentally find that depending on the Zr thickness, ZrO$_x$ tunnel barriers can be fully crystalline with chemically abrupt interfaces with niobium. Further analysis using electron energy loss spectroscopy reveals that ZrO$_x$ corresponds to tetragonal ZrO$_2$. Room temperature characterization of fabricated junctions using Simmons' model shows that ZrO$_2$ exhibits a low tunnel barrier height, which is promising in merged-element transmon applications. Low temperature transport measurements reveal sub-gap structure, while the low-voltage sub-gap resistance remains in the megaohm range.
title Low barrier ZrO$_x$-based Josephson junctions
topic Superconductivity
Materials Science
url https://arxiv.org/abs/2508.11593