Electro-thermal Co-design of Vertical \b{eta}-Ga2O3 Schottky Diodes with High-permittivity BaTiO3 Field-plate for High-field and Thermal Management

Documents similaires

• Over 3 kV and Ultra-Low leakage Vertical (011) \b{eta}-Ga2O3 Power Diodes with Engineered Schottky Contact and High-permittivity Dielectric Field Plate
  par: Hollar, Emerson J., et autres
  Publié: (2025)
• High insulation resistivity and low dielectric loss in (Ta, Al)‐codoped BaTiO 3 colossal permittivity materials
  par: Jiangtao Fan, et autres
  Publié: (2024)
• 2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width
  par: Saha, Chinmoy Nath, et autres
  Publié: (2025)
• Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes
  par: Liu, Yizheng, et autres
  Publié: (2025)
• Demonstration of KV-Class \b{eta}-Ga2O3 Trench Junction Barrier Schottky Diodes with SpaceModulated Junction Termination Extension
  par: Gilankar, Advait, et autres
  Publié: (2025)