CoRuTiGe: A Possible Spin Gapless Semiconductor
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arXiv
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866910074480361472 |
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| author | Kumar, Ravinder Roy, Tufan Ghadai, Baisali Kumar, Rakesh Mondal, Sucheta Kumar, Anil Lakhani, Archana Kumar, Devendra Shirai, Masafumi Gupta, Sachin |
| author_facet | Kumar, Ravinder Roy, Tufan Ghadai, Baisali Kumar, Rakesh Mondal, Sucheta Kumar, Anil Lakhani, Archana Kumar, Devendra Shirai, Masafumi Gupta, Sachin |
| contents | We report experimental and theoretical investigations on the quaternary Heusler alloy CoRuTiGe, synthesized using the arc melting technique. Crystal structure analysis reveals a tetragonal structure at room temperature. Magnetization measurements as a function of temperature and magnetic field indicate ferromagnetic nature with a saturation magnetization of 0.681 mB/f.u. at 5 K. The temperature dependence of electrical resistivity shows a nearly linear decrease in the high-temperature range, indicating the spin gapless semiconductor like behavior of the material. This SGS nature is further supported by the temperature-independent carrier concentration and mobility. Hall effect analysis reveals that the anomalous Hall effect in CoRuTiGe arises from both intrinsic and extrinsic mechanisms. Additionally, a well-defined symmetric negative magnetoresistance is observed at low temperatures. These findings suggest that CoRuTiGe holds significant promise for spintronic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_12376 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | CoRuTiGe: A Possible Spin Gapless Semiconductor Kumar, Ravinder Roy, Tufan Ghadai, Baisali Kumar, Rakesh Mondal, Sucheta Kumar, Anil Lakhani, Archana Kumar, Devendra Shirai, Masafumi Gupta, Sachin Materials Science Strongly Correlated Electrons We report experimental and theoretical investigations on the quaternary Heusler alloy CoRuTiGe, synthesized using the arc melting technique. Crystal structure analysis reveals a tetragonal structure at room temperature. Magnetization measurements as a function of temperature and magnetic field indicate ferromagnetic nature with a saturation magnetization of 0.681 mB/f.u. at 5 K. The temperature dependence of electrical resistivity shows a nearly linear decrease in the high-temperature range, indicating the spin gapless semiconductor like behavior of the material. This SGS nature is further supported by the temperature-independent carrier concentration and mobility. Hall effect analysis reveals that the anomalous Hall effect in CoRuTiGe arises from both intrinsic and extrinsic mechanisms. Additionally, a well-defined symmetric negative magnetoresistance is observed at low temperatures. These findings suggest that CoRuTiGe holds significant promise for spintronic applications. |
| title | CoRuTiGe: A Possible Spin Gapless Semiconductor |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2508.12376 |