Through Silicon Via Aware Design Planning for Thermally Efficient 3-D Integrated Circuits

Fuente: arXiv
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Main Authors: Chen, Yibo, Kurshan, Eren, Motschman, Dave, Johnson, Charles, Xie, Yuan
Format: Preprint
Published: 2025
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author Chen, Yibo
Kurshan, Eren
Motschman, Dave
Johnson, Charles
Xie, Yuan
author_facet Chen, Yibo
Kurshan, Eren
Motschman, Dave
Johnson, Charles
Xie, Yuan
contents 3-D integrated circuits (3-D ICs) offer performance advantages due to their increased bandwidth and reduced wire-length enabled by through-silicon-via structures (TSVs). Traditionally TSVs have been considered to improve the thermal conductivity in the vertical direction. However, the lateral thermal blockage effect becomes increasingly important for TSV via farms (a cluster of TSV vias used for signal bus connections between layers) because the TSV size and pitch continue to scale in μm range and the metal to insulator ratio becomes smaller. Consequently, dense TSV farms can create lateral thermal blockages in thinned silicon substrate and exacerbate the local hotspots. In this paper, we propose a thermal-aware via farm placement technique for 3-D ICs to minimize lateral heat blockages caused by dense signal bus TSV structures.
format Preprint
id arxiv_https___arxiv_org_abs_2508_13160
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Through Silicon Via Aware Design Planning for Thermally Efficient 3-D Integrated Circuits
Chen, Yibo
Kurshan, Eren
Motschman, Dave
Johnson, Charles
Xie, Yuan
Hardware Architecture
Emerging Technologies
3-D integrated circuits (3-D ICs) offer performance advantages due to their increased bandwidth and reduced wire-length enabled by through-silicon-via structures (TSVs). Traditionally TSVs have been considered to improve the thermal conductivity in the vertical direction. However, the lateral thermal blockage effect becomes increasingly important for TSV via farms (a cluster of TSV vias used for signal bus connections between layers) because the TSV size and pitch continue to scale in μm range and the metal to insulator ratio becomes smaller. Consequently, dense TSV farms can create lateral thermal blockages in thinned silicon substrate and exacerbate the local hotspots. In this paper, we propose a thermal-aware via farm placement technique for 3-D ICs to minimize lateral heat blockages caused by dense signal bus TSV structures.
title Through Silicon Via Aware Design Planning for Thermally Efficient 3-D Integrated Circuits
topic Hardware Architecture
Emerging Technologies
url https://arxiv.org/abs/2508.13160